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Origin of low thermal conductivity in SnSe

  • Beihang University
  • Southern University of Science and Technology
  • Shenzhen Key Laboratory of Thermoelectric Materials
  • Chongqing University
  • CAS - Institute of Solid State Physics
  • University of Science and Technology of China

Research output: Contribution to journalArticlepeer-review

Abstract

We provide direct evidence to understand the origin of low thermal conductivity of SnSe using elastic measurements. Compared to state-of-the-art lead chalcogenides PbQ(Q=Te, Se, S), SnSe exhibits low values of sound velocity (∼1420m/s), Young's modulus (E∼27.7GPa), and shear modulus (G∼9.6GPa), which are ascribed to the extremely weak Sn-Se atomic interactions (or bonds between layers); meanwhile, the deduced average Grüneisen parameter γ of SnSe is as large as ∼3.13, originating from the strong anharmonicity of the bonding arrangement. The calculated phonon mean free path (l ∼ 0.84 nm) at 300 K is comparable to the lattice parameters of SnSe, indicating little room is left for further reduction of the thermal conductivity through introducing nanoscale microstructures and microscale grain boundaries. The low elastic properties indicate that the weak chemical bonding stiffness of SnSe generally causes phonon modes softening which eventually slows down phonon propagation. This work provides insightful data to understand the low lattice thermal conductivity of SnSe.

Original languageEnglish
Article number125203
JournalPhysical Review B
Volume94
Issue number12
DOIs
StatePublished - 12 Sep 2016

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