Oriented growth of Ta2O5 films induced by substrate bias

A. P. Huang; Sh L. Xu; M. K. Zhu; G. H. Li; T. Liu; B. Wang; H. Yan

doi:10.1016/S0022-0248(03)01249-1

Oriented growth of Ta₂O₅ films induced by substrate bias

A. P. Huang
, Sh L. Xu
, M. K. Zhu^*
, G. H. Li
, T. Liu
, B. Wang
, H. Yan

^*Corresponding author for this work

Beijing University of Technology
Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Tantalum pentoxide (Ta₂O₅) films with high 〈001〉 orientation have exceptionally high dielectric constant. Usually, oriented Ta₂O₅ films were fabricated by post-annealing. In this paper, as-deposited Ta₂O₅ films with high 〈001〉 orientation were sputtered at low temperature with substrate bias. The orientation of the films is modified to be better with the bias being increased. The bias effect on the orientation of the films is discussed in details.

Original language	English
Pages (from-to)	145-149
Number of pages	5
Journal	Journal of Crystal Growth
Volume	255
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0248(03)01249-1
State	Published - Jul 2003
Externally published	Yes

Keywords

A1. Crystal Structure
A1. Nucleation
B1. Oxides
B2. Dielectric materials

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10.1016/S0022-0248(03)01249-1

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title = "Oriented growth of Ta2O5 films induced by substrate bias",

abstract = "Tantalum pentoxide (Ta2O5) films with high 〈001〉 orientation have exceptionally high dielectric constant. Usually, oriented Ta2O5 films were fabricated by post-annealing. In this paper, as-deposited Ta2O5 films with high 〈001〉 orientation were sputtered at low temperature with substrate bias. The orientation of the films is modified to be better with the bias being increased. The bias effect on the orientation of the films is discussed in details.",

keywords = "A1. Crystal Structure, A1. Nucleation, B1. Oxides, B2. Dielectric materials",

author = "Huang, \{A. P.\} and Xu, \{Sh L.\} and Zhu, \{M. K.\} and Li, \{G. H.\} and T. Liu and B. Wang and H. Yan",

year = "2003",

month = jul,

doi = "10.1016/S0022-0248(03)01249-1",

language = "英语",

volume = "255",

pages = "145--149",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Oriented growth of Ta2O5 films induced by substrate bias

AU - Huang, A. P.

AU - Xu, Sh L.

AU - Zhu, M. K.

AU - Li, G. H.

AU - Liu, T.

AU - Wang, B.

AU - Yan, H.

PY - 2003/7

Y1 - 2003/7

N2 - Tantalum pentoxide (Ta2O5) films with high 〈001〉 orientation have exceptionally high dielectric constant. Usually, oriented Ta2O5 films were fabricated by post-annealing. In this paper, as-deposited Ta2O5 films with high 〈001〉 orientation were sputtered at low temperature with substrate bias. The orientation of the films is modified to be better with the bias being increased. The bias effect on the orientation of the films is discussed in details.

AB - Tantalum pentoxide (Ta2O5) films with high 〈001〉 orientation have exceptionally high dielectric constant. Usually, oriented Ta2O5 films were fabricated by post-annealing. In this paper, as-deposited Ta2O5 films with high 〈001〉 orientation were sputtered at low temperature with substrate bias. The orientation of the films is modified to be better with the bias being increased. The bias effect on the orientation of the films is discussed in details.

KW - A1. Crystal Structure

KW - A1. Nucleation

KW - B1. Oxides

KW - B2. Dielectric materials

UR - https://www.scopus.com/pages/publications/0038378828

U2 - 10.1016/S0022-0248(03)01249-1

DO - 10.1016/S0022-0248(03)01249-1

M3 - 文章

AN - SCOPUS:0038378828

SN - 0022-0248

VL - 255

SP - 145

EP - 149

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

Oriented growth of Ta₂O₅ films induced by substrate bias

Abstract

Keywords

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