Optoelectronic memory using two-dimensional materials

Sidong Lei; Fangfang Wen; Bo Li; Qizhong Wang; Yihan Huang; Yongji Gong; Yongmin He; Pei Dong; James Bellah; Antony George; Liehui Ge; Jun Lou; Naomi J. Halas; Robert Vajtai; Pulickel M. Ajayan

doi:10.1021/nl503505f

Optoelectronic memory using two-dimensional materials

Sidong Lei
, Fangfang Wen
, Bo Li
, Qizhong Wang
, Yihan Huang
, Yongji Gong
, Yongmin He
, Pei Dong
, James Bellah
, Antony George^*
, Liehui Ge
, Jun Lou
, Naomi J. Halas
, Robert Vajtai
, Pulickel M. Ajayan

^*Corresponding author for this work

Rice University
Lanzhou University

Research output: Contribution to journal › Article › peer-review

189 Scopus citations

Abstract

An atomically thin optoelectronic memory array for image sensing is demonstrated with layered CuIn₇Se₁₁ and extended to InSe and MoS₂ atomic layers. Photogenerated charge carriers are trapped and subsequently retrieved from the potential well formed by gating a 2D material with Schottky barriers. The atomically thin layered optoelectronic memory can accumulate photon-generated charges during light exposure, and the charges can be read out later for data processing and permanent storage. An array of atomically thin image memory pixels was built to illustrate the potential of fabricating large-scale 2D material-based image sensors for image capture and storage.

Original language	English
Pages (from-to)	259-265
Number of pages	7
Journal	Nano Letters
Volume	15
Issue number	1
DOIs	https://doi.org/10.1021/nl503505f
State	Published - 14 Jan 2015
Externally published	Yes

Keywords

2D image sensor
2D optoelectronic memory
Cu-In-Se
InSe
MoS
trapping states

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10.1021/nl503505f

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title = "Optoelectronic memory using two-dimensional materials",

abstract = "An atomically thin optoelectronic memory array for image sensing is demonstrated with layered CuIn7Se11 and extended to InSe and MoS2 atomic layers. Photogenerated charge carriers are trapped and subsequently retrieved from the potential well formed by gating a 2D material with Schottky barriers. The atomically thin layered optoelectronic memory can accumulate photon-generated charges during light exposure, and the charges can be read out later for data processing and permanent storage. An array of atomically thin image memory pixels was built to illustrate the potential of fabricating large-scale 2D material-based image sensors for image capture and storage.",

keywords = "2D image sensor, 2D optoelectronic memory, Cu-In-Se, InSe, MoS, trapping states",

author = "Sidong Lei and Fangfang Wen and Bo Li and Qizhong Wang and Yihan Huang and Yongji Gong and Yongmin He and Pei Dong and James Bellah and Antony George and Liehui Ge and Jun Lou and Halas, \{Naomi J.\} and Robert Vajtai and Ajayan, \{Pulickel M.\}",

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year = "2015",

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doi = "10.1021/nl503505f",

language = "英语",

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pages = "259--265",

journal = "Nano Letters",

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TY - JOUR

T1 - Optoelectronic memory using two-dimensional materials

AU - Lei, Sidong

AU - Wen, Fangfang

AU - Li, Bo

AU - Wang, Qizhong

AU - Huang, Yihan

AU - Gong, Yongji

AU - He, Yongmin

AU - Dong, Pei

AU - Bellah, James

AU - George, Antony

AU - Ge, Liehui

AU - Lou, Jun

AU - Halas, Naomi J.

AU - Vajtai, Robert

AU - Ajayan, Pulickel M.

PY - 2015/1/14

Y1 - 2015/1/14

N2 - An atomically thin optoelectronic memory array for image sensing is demonstrated with layered CuIn7Se11 and extended to InSe and MoS2 atomic layers. Photogenerated charge carriers are trapped and subsequently retrieved from the potential well formed by gating a 2D material with Schottky barriers. The atomically thin layered optoelectronic memory can accumulate photon-generated charges during light exposure, and the charges can be read out later for data processing and permanent storage. An array of atomically thin image memory pixels was built to illustrate the potential of fabricating large-scale 2D material-based image sensors for image capture and storage.

AB - An atomically thin optoelectronic memory array for image sensing is demonstrated with layered CuIn7Se11 and extended to InSe and MoS2 atomic layers. Photogenerated charge carriers are trapped and subsequently retrieved from the potential well formed by gating a 2D material with Schottky barriers. The atomically thin layered optoelectronic memory can accumulate photon-generated charges during light exposure, and the charges can be read out later for data processing and permanent storage. An array of atomically thin image memory pixels was built to illustrate the potential of fabricating large-scale 2D material-based image sensors for image capture and storage.

KW - 2D image sensor

KW - 2D optoelectronic memory

KW - Cu-In-Se

KW - InSe

KW - MoS

KW - trapping states

UR - https://www.scopus.com/pages/publications/84920955324

U2 - 10.1021/nl503505f

DO - 10.1021/nl503505f

M3 - 文章

AN - SCOPUS:84920955324

SN - 1530-6984

VL - 15

SP - 259

EP - 265

JO - Nano Letters

JF - Nano Letters

IS - 1

ER -

Optoelectronic memory using two-dimensional materials

Abstract

Keywords

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