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Optical and electrical properties of ZnO:Al films prepared by tilted magnetron sputtering at low temperature

  • Lan Feng
  • , Xun Gang Diao*
  • , Tao Wang
  • , Hai Ying Liu
  • , Ming Sheng Kang
  • *Corresponding author for this work
  • Beihang University
  • Beijing Jing Yibo Electric Instrument Co., Ltd. Optical Technology
  • Albert Technology Co., Ltd. Shijiazhuang Colleagues

Research output: Contribution to journalArticlepeer-review

Abstract

Aluminum-doped zinc oxide (ZAO) thin films were synthesized via a DC-RF co-sputtering on glass substrates at room temperature. This paper studied the impact of tilt angle of the target on the electrical and optical properties, UV-visible-near infrared area transmittance, X-ray diffraction and surface morphology of the samples. The results show that when the target angle is 23°, the ZAO films are preferred (002) orientation. The lowest sheet resistance could be obtained, which is 17Ω / □. The resistivity is 2.2 × 10-3Ω · cm. The average transmittance is more than 85% in visible range, and the highest could be more than 95%. UV cut-off and near-infrared reflection effect is obvious.

Original languageEnglish
Pages (from-to)304-307
Number of pages4
JournalGongneng Cailiao/Journal of Functional Materials
Volume41
Issue numberSUPPL. 2
StatePublished - Sep 2010

Keywords

  • Co-sputtering
  • Tilted sputtering
  • Transparent conductive films
  • ZnO:Al films

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