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Occupation Dynamics of Floquet–Volkov States and Spectral Sum Rule

  • Xuanxi Cai
  • , Changhua Bao
  • , Benshu Fan
  • , Haoyuan Zhong
  • , Fei Wang
  • , Shaohua Zhou
  • , Tianyun Lin
  • , Hongyun Zhang
  • , Pu Yu
  • , Peizhe Tang*
  • , Wenhui Duan
  • , Shuyun Zhou*
  • *Corresponding author for this work
  • Tsinghua University
  • Max Planck Institute for the Structure and Dynamics of Matter
  • Frontier Science Center for Quantum Information

Research output: Contribution to journalLetterpeer-review

Abstract

Time-periodic light fields can dress electronic states in quantum materials, forming Floquet states whose dynamic occupation determines the transient material properties. Here, by using time- and angle-resolved photoemission spectroscopy (TrARPES), we reveal the transient occupation of Floquet–Volkov states in two semiconductors, black phosphorus and MoSe2. While the occupation of the light-induced sidebands, directly reflected by TrARPES spectral weight, strongly depends on the driving field, we find that the total spectral weight obtained by summing up all sidebands is conserved upon below-gap driving. Our work provides critical insights into the Floquet population dynamics, which are essential for the light-field tailoring of transient material properties.

Original languageEnglish
Pages (from-to)7034-7042
Number of pages9
JournalNano Letters
Volume26
Issue number21
DOIs
StatePublished - 3 Jun 2026

Keywords

  • Floquet engineering
  • electronic occupation
  • spectral sum rule
  • time-resolved ARPES

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