Novel photonic crystal structure GaN-based light-emitting diodes

  • Hu HaiYang*
  • , Lu Lin
  • , Du Wei
  • , Liu HongWei
  • , Kan Qiang
  • , Wang ChunXia
  • , Xu XingSheng
  • , Chen HongDa
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

For enhancing the output efficiency of GaN light-emitting diode(LED), we calculated the band structure of photonic crystal(PhC), and designed and fabricated several novel GaN LEDs with photonic crystal on Indium-Tin-Oxide(ITO) , which as p-type transparent contact of GaN LED. In this fabricating process, we developed conventional techniques in order that these methods can be easily applied to industrial volume-production. And we have done some preliminary experiments and obtained some results.

Original languageEnglish
Title of host publicationSolid State Lighting and Solar Energy Technologies
DOIs
StatePublished - 2008
Externally publishedYes
EventSolid State Lighting and Solar Energy Technologies - Beijing, China
Duration: 12 Nov 200714 Nov 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6841
ISSN (Print)0277-786X

Conference

ConferenceSolid State Lighting and Solar Energy Technologies
Country/TerritoryChina
CityBeijing
Period12/11/0714/11/07

Keywords

  • GaN
  • Light-emitting diodes
  • Photonic crystal

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