Novel microstructures on the surfaces of single crystal silicon irradiated by intense pulsed ion beams

Jie Shen; Xiao Yu; Yanyan Zhang; Haowen Zhong; Jie Zhang; Miao Qu; Sha Yan; Gaolong Zhang; Xiaofu Zhang; Xiaoyun Le

doi:10.1016/j.nimb.2015.08.038

Novel microstructures on the surfaces of single crystal silicon irradiated by intense pulsed ion beams

Jie Shen
, Xiao Yu
, Yanyan Zhang
, Haowen Zhong
, Jie Zhang
, Miao Qu
, Sha Yan
, Gaolong Zhang
, Xiaofu Zhang
, Xiaoyun Le^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

An ion beam treatment of high purity single crystal silicon specimens was performed with different shots by the irradiation of intense pulsed ion beams (IPIB), which were generated by an accelerating voltage of 350 kV and with the current density of 130 A/cm². As the result of irradiation, the formation of various microstructures caused by the irradiation effect, especially the thermal effect is confirmed by SEM and XRD analysis, and the corresponding processes are described and related explanations are given.

Original language	English
Pages (from-to)	26-29
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	365
DOIs	https://doi.org/10.1016/j.nimb.2015.08.038
State	Published - 15 Dec 2015

Keywords

Convection
Heat conduction
Intense pulsed ion beam
Single crystal silicon

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10.1016/j.nimb.2015.08.038

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Shen, J., Yu, X., Zhang, Y., Zhong, H., Zhang, J., Qu, M., Yan, S., Zhang, G., Zhang, X., & Le, X. (2015). Novel microstructures on the surfaces of single crystal silicon irradiated by intense pulsed ion beams. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 365, 26-29. https://doi.org/10.1016/j.nimb.2015.08.038

@article{c9f8468e50fb448d853aa8d007dfde43,

title = "Novel microstructures on the surfaces of single crystal silicon irradiated by intense pulsed ion beams",

abstract = "An ion beam treatment of high purity single crystal silicon specimens was performed with different shots by the irradiation of intense pulsed ion beams (IPIB), which were generated by an accelerating voltage of 350 kV and with the current density of 130 A/cm2. As the result of irradiation, the formation of various microstructures caused by the irradiation effect, especially the thermal effect is confirmed by SEM and XRD analysis, and the corresponding processes are described and related explanations are given.",

keywords = "Convection, Heat conduction, Intense pulsed ion beam, Single crystal silicon",

author = "Jie Shen and Xiao Yu and Yanyan Zhang and Haowen Zhong and Jie Zhang and Miao Qu and Sha Yan and Gaolong Zhang and Xiaofu Zhang and Xiaoyun Le",

note = "Publisher Copyright: {\textcopyright} 2015 Published by Elsevier B.V.",

year = "2015",

month = dec,

day = "15",

doi = "10.1016/j.nimb.2015.08.038",

language = "英语",

volume = "365",

pages = "26--29",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

}

Shen, J, Yu, X, Zhang, Y, Zhong, H, Zhang, J, Qu, M, Yan, S, Zhang, G, Zhang, X & Le, X 2015, 'Novel microstructures on the surfaces of single crystal silicon irradiated by intense pulsed ion beams', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 365, pp. 26-29. https://doi.org/10.1016/j.nimb.2015.08.038

TY - JOUR

T1 - Novel microstructures on the surfaces of single crystal silicon irradiated by intense pulsed ion beams

AU - Shen, Jie

AU - Yu, Xiao

AU - Zhang, Yanyan

AU - Zhong, Haowen

AU - Zhang, Jie

AU - Qu, Miao

AU - Yan, Sha

AU - Zhang, Gaolong

AU - Zhang, Xiaofu

AU - Le, Xiaoyun

PY - 2015/12/15

Y1 - 2015/12/15

N2 - An ion beam treatment of high purity single crystal silicon specimens was performed with different shots by the irradiation of intense pulsed ion beams (IPIB), which were generated by an accelerating voltage of 350 kV and with the current density of 130 A/cm2. As the result of irradiation, the formation of various microstructures caused by the irradiation effect, especially the thermal effect is confirmed by SEM and XRD analysis, and the corresponding processes are described and related explanations are given.

AB - An ion beam treatment of high purity single crystal silicon specimens was performed with different shots by the irradiation of intense pulsed ion beams (IPIB), which were generated by an accelerating voltage of 350 kV and with the current density of 130 A/cm2. As the result of irradiation, the formation of various microstructures caused by the irradiation effect, especially the thermal effect is confirmed by SEM and XRD analysis, and the corresponding processes are described and related explanations are given.

KW - Convection

KW - Heat conduction

KW - Intense pulsed ion beam

KW - Single crystal silicon

UR - https://www.scopus.com/pages/publications/84948567185

U2 - 10.1016/j.nimb.2015.08.038

DO - 10.1016/j.nimb.2015.08.038

M3 - 文章

AN - SCOPUS:84948567185

SN - 0168-583X

VL - 365

SP - 26

EP - 29

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Novel microstructures on the surfaces of single crystal silicon irradiated by intense pulsed ion beams

Abstract

Keywords

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