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Nonlinear optical absorption of InAs nanocrystals embedded in SiO2 thin films

  • J. Shi*
  • , K. Zhu
  • , L. Zhang
  • *Corresponding author for this work
  • CAS - Institute of Solid State Physics
  • University of Science and Technology of China

Research output: Contribution to journalArticlepeer-review

Abstract

Nonlinear optical absorption of InAs nanocrystals embedded in SiO2, films prepared by radio-frequency magnetron cosputtering was studied by Z-scan technique using a single Gaussian beam of a He-Ne laser (633 nm). Both two-photon absorption and saturation absorption were observed. The enhanced third-order nonlinear optical absorption coefficients were obtained in the composite film. Our results indicate that the type and magnitude of the nonlinear optical absorption coefficient of the composite films are related to the average size of the nanocrystals.

Original languageEnglish
Pages (from-to)645-649
Number of pages5
JournalSolid State Communications
Volume110
Issue number11
DOIs
StatePublished - 13 May 1999
Externally publishedYes

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