Narrowing Bandgap of HfS2 by Te Substitution for Short-Wavelength Infrared Photodetection

Jiafu Ye; Ke Liao; Xun Ge; Zhen Wang; Yang Wang; Meng Peng; Ting He; Peisong Wu; Hailu Wang; Yunfeng Chen; Zhuangzhuang Cui; Yue Gu; Hangyu Xu; Tengfei Xu; Qing Li; Xiaohao Zhou; Man Luo; Ning Li; Muhammad Zubair; Feng Wu; Peng Wang; Chongxin Shan; Gang Wang; Jinshui Miao; Weida Hu

doi:10.1002/adom.202002248

Narrowing Bandgap of HfS₂ by Te Substitution for Short-Wavelength Infrared Photodetection

Jiafu Ye
, Ke Liao
, Xun Ge
, Zhen Wang^*
, Yang Wang
, Meng Peng
, Ting He
, Peisong Wu
, Hailu Wang
, Yunfeng Chen
, Zhuangzhuang Cui
, Yue Gu
, Hangyu Xu
, Tengfei Xu
, Qing Li
, Xiaohao Zhou
, Man Luo
, Ning Li
, Muhammad Zubair
, Feng Wu

Peng Wang, Chongxin Shan, Gang Wang^*, Jinshui Miao^*, Weida Hu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics
University of Chinese Academy of Sciences
CAS - Institute of Physics
Songshan Lake Materials Laboratory
Huazhong University of Science and Technology
Nantong University
Zhengzhou University

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Infrared photodetectors are widely used in the field of remote sensing, communications, biomedical imaging, etc. Most photodetection based on 2D transition-metal dichalcogenides (TMDs) is limited to the visible (Vis) to near-infrared (NIR) due to large intrinsic bandgaps (≈1.2–2 eV). Here, a bandgap engineering of HfS₂ by a tellurium (Te)-replacement strategy is obtained via chemical vapor transport method. The bandgap values of HfS₂₍₁₋_x₎Te₂_x decrease from 1.7 to 0.88 eV with Te composition changing from 0 to 0.095. Few-layer HfS_1.81Te_0.19 based field-effect transistors exhibit a high current on/off ratio of 10⁶ and decent electron mobility of 12.6 cm² V⁻¹ s⁻¹ at room temperature. The photodetectors show a responsivity of 2 A W⁻¹ with a remarkable photocurrent of ≈3 μA and a fast response speed of 8.8/75 ms at 830 nm simultaneously. Further, the response spectrum of HfS₂₍₁₋_x₎Te₂_x based photodetectors is broadened from Vis to short-wavelength infrared (SWIR), covering the free-space laser communications wavelength and the second NIR region in medicine. Bandgap engineering of 2D TMDs proposed in this work offer a promising route to develop bandgap-variable 2D materials for infrared photodetection applications.

Original language	English
Article number	2002248
Journal	Advanced Optical Materials
Volume	9
Issue number	11
DOIs	https://doi.org/10.1002/adom.202002248
State	Published - 4 Jun 2021
Externally published	Yes

Keywords

bandgap engineering
HfS, infrared photodetectors
transition-metal dichalcogenides

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10.1002/adom.202002248

Cite this

Ye, J., Liao, K., Ge, X., Wang, Z., Wang, Y., Peng, M., He, T., Wu, P., Wang, H., Chen, Y., Cui, Z., Gu, Y., Xu, H., Xu, T., Li, Q., Zhou, X., Luo, M., Li, N., Zubair, M., ... Hu, W. (2021). Narrowing Bandgap of HfS₂ by Te Substitution for Short-Wavelength Infrared Photodetection. Advanced Optical Materials, 9(11), Article 2002248. https://doi.org/10.1002/adom.202002248

@article{6df26c634c604c09aabe8cecfc1b453b,

title = "Narrowing Bandgap of HfS2 by Te Substitution for Short-Wavelength Infrared Photodetection",

abstract = "Infrared photodetectors are widely used in the field of remote sensing, communications, biomedical imaging, etc. Most photodetection based on 2D transition-metal dichalcogenides (TMDs) is limited to the visible (Vis) to near-infrared (NIR) due to large intrinsic bandgaps (≈1.2–2 eV). Here, a bandgap engineering of HfS2 by a tellurium (Te)-replacement strategy is obtained via chemical vapor transport method. The bandgap values of HfS2(1−x)Te2x decrease from 1.7 to 0.88 eV with Te composition changing from 0 to 0.095. Few-layer HfS1.81Te0.19 based field-effect transistors exhibit a high current on/off ratio of 106 and decent electron mobility of 12.6 cm2 V−1 s−1 at room temperature. The photodetectors show a responsivity of 2 A W−1 with a remarkable photocurrent of ≈3 μA and a fast response speed of 8.8/75 ms at 830 nm simultaneously. Further, the response spectrum of HfS2(1−x)Te2x based photodetectors is broadened from Vis to short-wavelength infrared (SWIR), covering the free-space laser communications wavelength and the second NIR region in medicine. Bandgap engineering of 2D TMDs proposed in this work offer a promising route to develop bandgap-variable 2D materials for infrared photodetection applications.",

keywords = "bandgap engineering, HfS, infrared photodetectors, transition-metal dichalcogenides",

author = "Jiafu Ye and Ke Liao and Xun Ge and Zhen Wang and Yang Wang and Meng Peng and Ting He and Peisong Wu and Hailu Wang and Yunfeng Chen and Zhuangzhuang Cui and Yue Gu and Hangyu Xu and Tengfei Xu and Qing Li and Xiaohao Zhou and Man Luo and Ning Li and Muhammad Zubair and Feng Wu and Peng Wang and Chongxin Shan and Gang Wang and Jinshui Miao and Weida Hu",

note = "Publisher Copyright: {\textcopyright} 2021 Wiley-VCH GmbH",

year = "2021",

month = jun,

day = "4",

doi = "10.1002/adom.202002248",

language = "英语",

volume = "9",

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Ye, J, Liao, K, Ge, X, Wang, Z, Wang, Y, Peng, M, He, T, Wu, P, Wang, H, Chen, Y, Cui, Z, Gu, Y, Xu, H, Xu, T, Li, Q, Zhou, X, Luo, M, Li, N, Zubair, M, Wu, F, Wang, P, Shan, C, Wang, G, Miao, J & Hu, W 2021, 'Narrowing Bandgap of HfS₂ by Te Substitution for Short-Wavelength Infrared Photodetection', Advanced Optical Materials, vol. 9, no. 11, 2002248. https://doi.org/10.1002/adom.202002248

TY - JOUR

T1 - Narrowing Bandgap of HfS2 by Te Substitution for Short-Wavelength Infrared Photodetection

AU - Ye, Jiafu

AU - Liao, Ke

AU - Ge, Xun

AU - Wang, Zhen

AU - Wang, Yang

AU - Peng, Meng

AU - He, Ting

AU - Wu, Peisong

AU - Wang, Hailu

AU - Chen, Yunfeng

AU - Cui, Zhuangzhuang

AU - Gu, Yue

AU - Xu, Hangyu

AU - Xu, Tengfei

AU - Li, Qing

AU - Zhou, Xiaohao

AU - Luo, Man

AU - Li, Ning

AU - Zubair, Muhammad

AU - Wu, Feng

AU - Wang, Peng

AU - Shan, Chongxin

AU - Wang, Gang

AU - Miao, Jinshui

AU - Hu, Weida

PY - 2021/6/4

Y1 - 2021/6/4

N2 - Infrared photodetectors are widely used in the field of remote sensing, communications, biomedical imaging, etc. Most photodetection based on 2D transition-metal dichalcogenides (TMDs) is limited to the visible (Vis) to near-infrared (NIR) due to large intrinsic bandgaps (≈1.2–2 eV). Here, a bandgap engineering of HfS2 by a tellurium (Te)-replacement strategy is obtained via chemical vapor transport method. The bandgap values of HfS2(1−x)Te2x decrease from 1.7 to 0.88 eV with Te composition changing from 0 to 0.095. Few-layer HfS1.81Te0.19 based field-effect transistors exhibit a high current on/off ratio of 106 and decent electron mobility of 12.6 cm2 V−1 s−1 at room temperature. The photodetectors show a responsivity of 2 A W−1 with a remarkable photocurrent of ≈3 μA and a fast response speed of 8.8/75 ms at 830 nm simultaneously. Further, the response spectrum of HfS2(1−x)Te2x based photodetectors is broadened from Vis to short-wavelength infrared (SWIR), covering the free-space laser communications wavelength and the second NIR region in medicine. Bandgap engineering of 2D TMDs proposed in this work offer a promising route to develop bandgap-variable 2D materials for infrared photodetection applications.

AB - Infrared photodetectors are widely used in the field of remote sensing, communications, biomedical imaging, etc. Most photodetection based on 2D transition-metal dichalcogenides (TMDs) is limited to the visible (Vis) to near-infrared (NIR) due to large intrinsic bandgaps (≈1.2–2 eV). Here, a bandgap engineering of HfS2 by a tellurium (Te)-replacement strategy is obtained via chemical vapor transport method. The bandgap values of HfS2(1−x)Te2x decrease from 1.7 to 0.88 eV with Te composition changing from 0 to 0.095. Few-layer HfS1.81Te0.19 based field-effect transistors exhibit a high current on/off ratio of 106 and decent electron mobility of 12.6 cm2 V−1 s−1 at room temperature. The photodetectors show a responsivity of 2 A W−1 with a remarkable photocurrent of ≈3 μA and a fast response speed of 8.8/75 ms at 830 nm simultaneously. Further, the response spectrum of HfS2(1−x)Te2x based photodetectors is broadened from Vis to short-wavelength infrared (SWIR), covering the free-space laser communications wavelength and the second NIR region in medicine. Bandgap engineering of 2D TMDs proposed in this work offer a promising route to develop bandgap-variable 2D materials for infrared photodetection applications.

KW - bandgap engineering

KW - HfS, infrared photodetectors

KW - transition-metal dichalcogenides

UR - https://www.scopus.com/pages/publications/85103205434

U2 - 10.1002/adom.202002248

DO - 10.1002/adom.202002248

M3 - 文章

AN - SCOPUS:85103205434

SN - 2195-1071

VL - 9

JO - Advanced Optical Materials

JF - Advanced Optical Materials

IS - 11

M1 - 2002248

ER -

Narrowing Bandgap of HfS₂ by Te Substitution for Short-Wavelength Infrared Photodetection

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