@inproceedings{521351de43f44bf4ae817e5b388c8d4c,
title = "Multilevel set/reset switching characteristics in Al/CeOx/Pt RRAM devices",
abstract = "Al/CeOx/Pt based resistive random access memory (RRAM) devices were fabricated and investigated. The CeOx RRAM devices show self-compliance set switching without a requirement of high voltage electric forming process. Multilevel set and reset switching processes were observed in the CeOx RRAM devices. Based on the unique distribution characteristic of oxygen vacancies in CeOx films, the possible mechanism of multilevel resistive switching (RS) in the CeOx RRAM Devices was discussed.",
keywords = "CeOx, RRAM, multilevel resistive switching",
author = "Liu, \{L. F.\} and Y. Hou and D. Yu and B. Chen and B. Gao and Y. Tian and Han, \{D. D.\} and Y. Wang and Kang, \{J. F.\} and X. Zhang",
year = "2012",
doi = "10.1109/EDSSC.2012.6482850",
language = "英语",
isbn = "9781467356961",
series = "2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012",
booktitle = "2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012",
note = "2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 ; Conference date: 03-12-2012 Through 05-12-2012",
}