Multi-quantum-well GaAs/GaInNAs resonant cavity enhanced photodetector operating at long wavelength

A GaAs-based multi-quantum-well resonant cavity enhanced (RCE) photodetector operating at long wavelength was demonstrated. The GaAs/AlAs distributed Bragg reflectors (DBR) and multi-quantum-well GaAs/GaInNAs absorbing layers were grown on GaAs substrate by molecular beam epitaxy (MBE). The growth of GaInNAs circumvents the problem that the GaAs-based material can only response to short wavelength. A 17.4% peak quantum efficiency was obtained at 1296.5 nm with a full width at half maximum of 11 nm. The density of dark current is 8.74 × 10^-15 A/μm² at zero bias voltage which means the good characteristic of dark current. The 3 dB bandwidth of the device was calculated to 4.82 GHz by the measure of the RC constant.