Multi-level cell Spin Transfer Torque MRAM based on stochastic switching

Yue Zhang; Weisheng Zhao; Jacques Olivier Klein; Wang Kang; Damien Querlioz; Claude Chappert; Dafine Ravelosona

doi:10.1109/NANO.2013.6720849

Multi-level cell Spin Transfer Torque MRAM based on stochastic switching

Yue Zhang
, Weisheng Zhao
, Jacques Olivier Klein
, Wang Kang
, Damien Querlioz
, Claude Chappert
, Dafine Ravelosona

Université Paris-Saclay
CNRS

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

17 Scopus citations

Abstract

Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) provides a promising pathway forthe next generation of non-volatile memory and logic chips. The perpendicular magnetic anisotropy (PMA) in CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) nanopillar provides high thermal stability and low critical current. However, the STT switching mechanism of MTJ has been revealed intrinsically stochastic, which results from the unavoidable thermal fluctuations of magnetization. This phenomenon affects deeply the reliability of hybrid CMOS/MTJ interface circuits and drives important power overhead. In this paper, we present a multilevel cell (MLC) STT-MRAM benefiting from the stochastic behaviors. It allows not only higher storage density, but also reduces the programming power and delay. This new cell can be also used as electrical synapse to build up neuromorphic computing systems or other biological networks. Monte-Carlo statistical simulations based on a 40 nm technology node have been carried out to validate its functionality and demonstrate its performance.

Original language	English
Title of host publication	2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Pages	233-236
Number of pages	4
DOIs	https://doi.org/10.1109/NANO.2013.6720849
State	Published - 2013
Externally published	Yes
Event	2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China Duration: 5 Aug 2013 → 8 Aug 2013

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Country/Territory	China
City	Beijing
Period	5/08/13 → 8/08/13

Keywords

MRAM
Multilevel cell
Non-Volatile
Perpendicular Magnetic Anisotropy
Stochastic

Access to Document

10.1109/NANO.2013.6720849

Cite this

Zhang, Y., Zhao, W., Klein, J. O., Kang, W., Querlioz, D., Chappert, C., & Ravelosona, D. (2013). Multi-level cell Spin Transfer Torque MRAM based on stochastic switching. In 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 (pp. 233-236). Article 6720849 (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2013.6720849

@inproceedings{558a99dbf09540fba26b9cb0aef4985e,

title = "Multi-level cell Spin Transfer Torque MRAM based on stochastic switching",

abstract = "Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) provides a promising pathway forthe next generation of non-volatile memory and logic chips. The perpendicular magnetic anisotropy (PMA) in CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) nanopillar provides high thermal stability and low critical current. However, the STT switching mechanism of MTJ has been revealed intrinsically stochastic, which results from the unavoidable thermal fluctuations of magnetization. This phenomenon affects deeply the reliability of hybrid CMOS/MTJ interface circuits and drives important power overhead. In this paper, we present a multilevel cell (MLC) STT-MRAM benefiting from the stochastic behaviors. It allows not only higher storage density, but also reduces the programming power and delay. This new cell can be also used as electrical synapse to build up neuromorphic computing systems or other biological networks. Monte-Carlo statistical simulations based on a 40 nm technology node have been carried out to validate its functionality and demonstrate its performance.",

keywords = "MRAM, Multilevel cell, Non-Volatile, Perpendicular Magnetic Anisotropy, Stochastic",

author = "Yue Zhang and Weisheng Zhao and Klein, \{Jacques Olivier\} and Wang Kang and Damien Querlioz and Claude Chappert and Dafine Ravelosona",

year = "2013",

doi = "10.1109/NANO.2013.6720849",

language = "英语",

isbn = "9781479906758",

series = "Proceedings of the IEEE Conference on Nanotechnology",

pages = "233--236",

booktitle = "2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013",

note = "2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 ; Conference date: 05-08-2013 Through 08-08-2013",

}

Zhang, Y , Zhao, W, Klein, JO, Kang, W, Querlioz, D, Chappert, C & Ravelosona, D 2013, Multi-level cell Spin Transfer Torque MRAM based on stochastic switching. in 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013., 6720849, Proceedings of the IEEE Conference on Nanotechnology, pp. 233-236, 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013, Beijing, China, 5/08/13. https://doi.org/10.1109/NANO.2013.6720849

Multi-level cell Spin Transfer Torque MRAM based on stochastic switching. / Zhang, Yue ; Zhao, Weisheng; Klein, Jacques Olivier et al.
2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013. 2013. p. 233-236 6720849 (Proceedings of the IEEE Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Klein, Jacques Olivier

AU - Kang, Wang

AU - Querlioz, Damien

AU - Chappert, Claude

AU - Ravelosona, Dafine

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N2 - Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) provides a promising pathway forthe next generation of non-volatile memory and logic chips. The perpendicular magnetic anisotropy (PMA) in CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) nanopillar provides high thermal stability and low critical current. However, the STT switching mechanism of MTJ has been revealed intrinsically stochastic, which results from the unavoidable thermal fluctuations of magnetization. This phenomenon affects deeply the reliability of hybrid CMOS/MTJ interface circuits and drives important power overhead. In this paper, we present a multilevel cell (MLC) STT-MRAM benefiting from the stochastic behaviors. It allows not only higher storage density, but also reduces the programming power and delay. This new cell can be also used as electrical synapse to build up neuromorphic computing systems or other biological networks. Monte-Carlo statistical simulations based on a 40 nm technology node have been carried out to validate its functionality and demonstrate its performance.

AB - Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) provides a promising pathway forthe next generation of non-volatile memory and logic chips. The perpendicular magnetic anisotropy (PMA) in CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) nanopillar provides high thermal stability and low critical current. However, the STT switching mechanism of MTJ has been revealed intrinsically stochastic, which results from the unavoidable thermal fluctuations of magnetization. This phenomenon affects deeply the reliability of hybrid CMOS/MTJ interface circuits and drives important power overhead. In this paper, we present a multilevel cell (MLC) STT-MRAM benefiting from the stochastic behaviors. It allows not only higher storage density, but also reduces the programming power and delay. This new cell can be also used as electrical synapse to build up neuromorphic computing systems or other biological networks. Monte-Carlo statistical simulations based on a 40 nm technology node have been carried out to validate its functionality and demonstrate its performance.

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ER -

Multi-level cell Spin Transfer Torque MRAM based on stochastic switching

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Keywords

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