MRAM crossbar based configurable logic block

Yahya Lakys; Weisheng Zhao; Jacques Olivier Klein; Claude Chappert

doi:10.1109/ISCAS.2012.6271934

MRAM crossbar based configurable logic block

Yahya Lakys^*
, Weisheng Zhao
, Jacques Olivier Klein
, Claude Chappert

^*Corresponding author for this work

Université Paris-Saclay

Research output: Contribution to conference › Paper › peer-review

14 Scopus citations

Abstract

Spintronics-based non-volatile storage devices promise great potential to be integrated in reconfigurable circuits to overcome the major hurdles related to conventional flash and SRAM memories, such as low logic density, high standby power and long (re) boot latency. In this paper, we describe a compact design of configurable logic block based on Magnetic RAM (MRAM) crossbar architecture. The logic density can be increased greatly ( 5 times) compared to conventional designs; the standby power can be nearly zero thanks to the non-volatility of MRAM. Its high speed and power efficiency (10.4 Tera-OPS/Watt in computing mode) are also demonstrated through mixed CMOS/Magnetic spice simulations. Fully dynamic reconfiguration through context switching is also studied, which could be achieved with low area overhead.

Original language	English
Pages	2945-2948
Number of pages	4
DOIs	https://doi.org/10.1109/ISCAS.2012.6271934
State	Published - 2012
Externally published	Yes
Event	2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 - Seoul, Korea, Republic of Duration: 20 May 2012 → 23 May 2012

Conference

Conference	2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012
Country/Territory	Korea, Republic of
City	Seoul
Period	20/05/12 → 23/05/12

Keywords

Context switching
Crossbar architecture
MRAM
MTJ
Non-Volatile
Spintronics

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10.1109/ISCAS.2012.6271934

Cite this

@conference{6d184d1ad0264aee8fba6e183c77e04f,

title = "MRAM crossbar based configurable logic block",

abstract = "Spintronics-based non-volatile storage devices promise great potential to be integrated in reconfigurable circuits to overcome the major hurdles related to conventional flash and SRAM memories, such as low logic density, high standby power and long (re) boot latency. In this paper, we describe a compact design of configurable logic block based on Magnetic RAM (MRAM) crossbar architecture. The logic density can be increased greatly ( 5 times) compared to conventional designs; the standby power can be nearly zero thanks to the non-volatility of MRAM. Its high speed and power efficiency (10.4 Tera-OPS/Watt in computing mode) are also demonstrated through mixed CMOS/Magnetic spice simulations. Fully dynamic reconfiguration through context switching is also studied, which could be achieved with low area overhead.",

keywords = "Context switching, Crossbar architecture, MRAM, MTJ, Non-Volatile, Spintronics",

author = "Yahya Lakys and Weisheng Zhao and Klein, \{Jacques Olivier\} and Claude Chappert",

year = "2012",

doi = "10.1109/ISCAS.2012.6271934",

language = "英语",

pages = "2945--2948",

note = "2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 ; Conference date: 20-05-2012 Through 23-05-2012",

}

TY - CONF

T1 - MRAM crossbar based configurable logic block

AU - Lakys, Yahya

AU - Zhao, Weisheng

AU - Klein, Jacques Olivier

AU - Chappert, Claude

PY - 2012

Y1 - 2012

N2 - Spintronics-based non-volatile storage devices promise great potential to be integrated in reconfigurable circuits to overcome the major hurdles related to conventional flash and SRAM memories, such as low logic density, high standby power and long (re) boot latency. In this paper, we describe a compact design of configurable logic block based on Magnetic RAM (MRAM) crossbar architecture. The logic density can be increased greatly ( 5 times) compared to conventional designs; the standby power can be nearly zero thanks to the non-volatility of MRAM. Its high speed and power efficiency (10.4 Tera-OPS/Watt in computing mode) are also demonstrated through mixed CMOS/Magnetic spice simulations. Fully dynamic reconfiguration through context switching is also studied, which could be achieved with low area overhead.

AB - Spintronics-based non-volatile storage devices promise great potential to be integrated in reconfigurable circuits to overcome the major hurdles related to conventional flash and SRAM memories, such as low logic density, high standby power and long (re) boot latency. In this paper, we describe a compact design of configurable logic block based on Magnetic RAM (MRAM) crossbar architecture. The logic density can be increased greatly ( 5 times) compared to conventional designs; the standby power can be nearly zero thanks to the non-volatility of MRAM. Its high speed and power efficiency (10.4 Tera-OPS/Watt in computing mode) are also demonstrated through mixed CMOS/Magnetic spice simulations. Fully dynamic reconfiguration through context switching is also studied, which could be achieved with low area overhead.

KW - Context switching

KW - Crossbar architecture

KW - MRAM

KW - MTJ

KW - Non-Volatile

KW - Spintronics

UR - https://www.scopus.com/pages/publications/84866595614

U2 - 10.1109/ISCAS.2012.6271934

DO - 10.1109/ISCAS.2012.6271934

M3 - 论文

AN - SCOPUS:84866595614

SP - 2945

EP - 2948

T2 - 2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012

Y2 - 20 May 2012 through 23 May 2012

ER -

MRAM crossbar based configurable logic block

Abstract

Conference

Keywords

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