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Monolithic integration of Pb(Zr,Ti)O3 thin film based resonators using a complete dry microfabrication process

  • Yonggang Jiang*
  • , Kensuke Kanda
  • , Yuki Iga
  • , Takayuki Fujita
  • , Kohei Higuchi
  • , Kazusuke Maenaka
  • *Corresponding author for this work
  • Japan Science and Technology Agency
  • University of Hyogo

Research output: Contribution to journal › Article › peer-review

Abstract

Monolithic fabrication of lead zirconate titanate [Pb(Zr,Ti)O3 or PZT] based thin film resonant devices such as microcantilevers, Lamb wave and bulk acoustic wave resonators are demonstrated. High-performance PZT thin films with a thickness of 2.6 μm are prepared on a silicon on insulator wafer by a sputtering deposition process. A highly selective reactive ion etching process is employed for micro-patterning of PZT, platinum electrodes, and SiO 2 insulation layer. Self-actuation of the PZT microcantilevers is demonstrated and the frequency response is characterized using a laser Doppler vibrometer. The frequency response of the Lamb wave resonator is evaluated by measuring its transmission characteristic using a network analyzer. For a Lamb wave resonator with a length of 240 μm and an interdigital period of 80 μm, the 1st order and 2nd resonance frequencies are 15.3 and 41.8 MHz, respectively.

Original languageEnglish
Pages (from-to)137-142
Number of pages6
JournalMicrosystem Technologies
Volume19
Issue number1
DOIs
StatePublished - Jan 2013

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