Abstract
Construction of vertical heterostructures by stacking two-dimensional (2D) layered materials via chemical bonds can be an effective strategy to explore advanced solar-energy-conversion systems. However, it remains a great challenge to fabricate such heterostructures based on conversional oxide-based compounds, as they either do not possess a 2D layered structure or are not suitable for epitaxial growth due to large lattice mismatch. Here, a vertical heterostructure of bismuth oxyhalide semiconductors fabricated through a heteroepitaxial anion exchange method is reported. Monolayer Bi 2 WO 6 is epitaxially grown on the exposed surface of BiOI to inhibit photocorrosion and introduce active sites. Theoretical and experimental results reveal that electrons generated under visible-light irradiation can directly transfer to surface coordinatively unsaturated (CUS) Bi atoms, which contribute to the adsorption and activation of reactant molecules. As a result, the Bi 2 WO 6 /BiOI vertical heterostructures exhibit significantly enhanced visible-light-driven NO oxidation activity compared with BiOI and Bi 2 WO 6 .
| Original language | English |
|---|---|
| Article number | 1808084 |
| Journal | Advanced Functional Materials |
| Volume | 29 |
| Issue number | 15 |
| DOIs | |
| State | Published - 11 Apr 2019 |
Keywords
- Bi WO
- BiOI
- NO oxidation
- epitaxial heterostructures
- photocatalysis
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