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Molecular Beam Epitaxy-Grown SnSe in the Rock-Salt Structure: An Artificial Topological Crystalline Insulator Material

  • Zhenyu Wang
  • , Jianfeng Wang
  • , Yunyi Zang
  • , Qinghua Zhang
  • , Jin An Shi
  • , Tian Jiang
  • , Yan Gong
  • , Can Li Song
  • , Shuai Hua Ji
  • , Li Li Wang
  • , Lin Gu
  • , Ke He*
  • , Wenhui Duan
  • , Xucun Ma
  • , Xi Chen
  • , Qi Kun Xue
  • *Corresponding author for this work
  • Tsinghua University
  • CAS - Institute of Physics
  • National University of Defense Technology
  • Collaborative Innovation Center of Quantum Matter

Research output: Contribution to journalComment/debate

Abstract

A new topological crystalline insulator material, SnSe in the rock-salt structure, is obtained using molecular beam epitaxy. The thermodynamically unstable rock-salt SnSe phase is stabilized in epitaxial films up to 20 nm by a Bi2Se3 substrate. Dirac surface states are observed at both the Γ¯ and the M¯ points using angle-resolved photoemission spectroscopy; this confirms the topological crystalline insulator phase of the films.

Original languageEnglish
Pages (from-to)4150-4154
Number of pages5
JournalAdvanced Materials
Volume27
Issue number28
DOIs
StatePublished - 1 Jul 2015
Externally publishedYes

Keywords

  • SnSe films
  • molecular beam epitaxy
  • rock-salt structures
  • topological crystalline insulators

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