Abstract
α-In2Se3 has a two-layer structure with 1/3 of the cation sites vacant. After addition of Ag to In2Se3, we identified the main phase as In5AgSe8 with nanoinclusions of InSe forming in situ. Ag incorporation favors the formation of Ag2Se slab, which is largely responsible for the decrease in band gap Eg, accounting for much of the increase (decrease) in electrical conductivity (Seebeck coefficient). This effect, combined with a reduction in lattice thermal conductivity, results in a big improvement in thermoelectric property over α-In2Se3.
| Original language | English |
|---|---|
| Pages (from-to) | 510-512 |
| Number of pages | 3 |
| Journal | Scripta Materialia |
| Volume | 64 |
| Issue number | 6 |
| DOIs | |
| State | Published - Mar 2011 |
Keywords
- Band gap
- Structural modifications
- Thermoelectric properties
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