Modeling, simulation, fabrication, and characterization of a 10-μ W/cm2 class si-nanowire thermoelectric generator for IoT applications

Motohiro Tomita; Shunsuke Oba; Yuya Himeda; Ryo Yamato; Keisuke Shima; Takehiro Kumada; Mao Xu; Hiroki Takezawa; Kohhei Mesaki; Kazuaki Tsuda; Shuichiro Hashimoto; Tianzhuo Zhan; Hui Zhang; Yoshinari Kamakura; Yuhhei Suzuki; Hiroshi Inokawa; Hiroya Ikeda; Takashi Matsukawa; Takeo Matsuki; Takanobu Watanabe

doi:10.1109/TED.2018.2867845

Modeling, simulation, fabrication, and characterization of a 10-μ W/cm² class si-nanowire thermoelectric generator for IoT applications

Motohiro Tomita^*
, Shunsuke Oba
, Yuya Himeda
, Ryo Yamato
, Keisuke Shima
, Takehiro Kumada
, Mao Xu
, Hiroki Takezawa
, Kohhei Mesaki
, Kazuaki Tsuda
, Shuichiro Hashimoto
, Tianzhuo Zhan
, Hui Zhang
, Yoshinari Kamakura
, Yuhhei Suzuki
, Hiroshi Inokawa
, Hiroya Ikeda
, Takashi Matsukawa
, Takeo Matsuki
, Takanobu Watanabe

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

67 Scopus citations

Abstract

We propose a planar device architecture compatible with the CMOS process technology as the optimal current benchmark of a Si-nanowire (NW) thermoelectric (TE) power generator. The proposed device is driven by a temperature gradient that is formed in the proximity of a perpendicular heat flow to the substrate. Therefore, unlike the conventional TE generators, the planar short Si-NWs need not be suspended on a cavity structure. Under an externally applied temperature difference of 5 K, the recorded TE power density is observed to be 12 μW/cm² by shortening the Si-NWs length and suppressing the parasitic thermal resistance of the Si substrate. The demonstration paves a pathway to develop cost-effective autonomous internet-of-things applications that utilize the environmental and body heats.

Original language	English
Article number	8467534
Pages (from-to)	5180-5188
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	11
DOIs	https://doi.org/10.1109/TED.2018.2867845
State	Published - Nov 2018
Externally published	Yes

Keywords

CMOS process
Si nanowire (NW)
energy harvesting
scalability
thermoelectric (TE) generator

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10.1109/TED.2018.2867845

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Tomita, M., Oba, S., Himeda, Y., Yamato, R., Shima, K., Kumada, T., Xu, M., Takezawa, H., Mesaki, K., Tsuda, K., Hashimoto, S., Zhan, T., Zhang, H., Kamakura, Y., Suzuki, Y., Inokawa, H., Ikeda, H., Matsukawa, T., Matsuki, T., & Watanabe, T. (2018). Modeling, simulation, fabrication, and characterization of a 10-μ W/cm² class si-nanowire thermoelectric generator for IoT applications. IEEE Transactions on Electron Devices, 65(11), 5180-5188. Article 8467534. https://doi.org/10.1109/TED.2018.2867845

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title = "Modeling, simulation, fabrication, and characterization of a 10-μ W/cm2 class si-nanowire thermoelectric generator for IoT applications",

abstract = "We propose a planar device architecture compatible with the CMOS process technology as the optimal current benchmark of a Si-nanowire (NW) thermoelectric (TE) power generator. The proposed device is driven by a temperature gradient that is formed in the proximity of a perpendicular heat flow to the substrate. Therefore, unlike the conventional TE generators, the planar short Si-NWs need not be suspended on a cavity structure. Under an externally applied temperature difference of 5 K, the recorded TE power density is observed to be 12 μW/cm2 by shortening the Si-NWs length and suppressing the parasitic thermal resistance of the Si substrate. The demonstration paves a pathway to develop cost-effective autonomous internet-of-things applications that utilize the environmental and body heats.",

keywords = "CMOS process, Si nanowire (NW), energy harvesting, scalability, thermoelectric (TE) generator",

author = "Motohiro Tomita and Shunsuke Oba and Yuya Himeda and Ryo Yamato and Keisuke Shima and Takehiro Kumada and Mao Xu and Hiroki Takezawa and Kohhei Mesaki and Kazuaki Tsuda and Shuichiro Hashimoto and Tianzhuo Zhan and Hui Zhang and Yoshinari Kamakura and Yuhhei Suzuki and Hiroshi Inokawa and Hiroya Ikeda and Takashi Matsukawa and Takeo Matsuki and Takanobu Watanabe",

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year = "2018",

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doi = "10.1109/TED.2018.2867845",

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Tomita, M, Oba, S, Himeda, Y, Yamato, R, Shima, K, Kumada, T, Xu, M, Takezawa, H, Mesaki, K, Tsuda, K, Hashimoto, S, Zhan, T, Zhang, H, Kamakura, Y, Suzuki, Y, Inokawa, H, Ikeda, H, Matsukawa, T, Matsuki, T & Watanabe, T 2018, 'Modeling, simulation, fabrication, and characterization of a 10-μ W/cm² class si-nanowire thermoelectric generator for IoT applications', IEEE Transactions on Electron Devices, vol. 65, no. 11, 8467534, pp. 5180-5188. https://doi.org/10.1109/TED.2018.2867845

TY - JOUR

T1 - Modeling, simulation, fabrication, and characterization of a 10-μ W/cm2 class si-nanowire thermoelectric generator for IoT applications

AU - Tomita, Motohiro

AU - Oba, Shunsuke

AU - Himeda, Yuya

AU - Yamato, Ryo

AU - Shima, Keisuke

AU - Kumada, Takehiro

AU - Xu, Mao

AU - Takezawa, Hiroki

AU - Mesaki, Kohhei

AU - Tsuda, Kazuaki

AU - Hashimoto, Shuichiro

AU - Zhan, Tianzhuo

AU - Zhang, Hui

AU - Kamakura, Yoshinari

AU - Suzuki, Yuhhei

AU - Inokawa, Hiroshi

AU - Ikeda, Hiroya

AU - Matsukawa, Takashi

AU - Matsuki, Takeo

AU - Watanabe, Takanobu

PY - 2018/11

Y1 - 2018/11

N2 - We propose a planar device architecture compatible with the CMOS process technology as the optimal current benchmark of a Si-nanowire (NW) thermoelectric (TE) power generator. The proposed device is driven by a temperature gradient that is formed in the proximity of a perpendicular heat flow to the substrate. Therefore, unlike the conventional TE generators, the planar short Si-NWs need not be suspended on a cavity structure. Under an externally applied temperature difference of 5 K, the recorded TE power density is observed to be 12 μW/cm2 by shortening the Si-NWs length and suppressing the parasitic thermal resistance of the Si substrate. The demonstration paves a pathway to develop cost-effective autonomous internet-of-things applications that utilize the environmental and body heats.

AB - We propose a planar device architecture compatible with the CMOS process technology as the optimal current benchmark of a Si-nanowire (NW) thermoelectric (TE) power generator. The proposed device is driven by a temperature gradient that is formed in the proximity of a perpendicular heat flow to the substrate. Therefore, unlike the conventional TE generators, the planar short Si-NWs need not be suspended on a cavity structure. Under an externally applied temperature difference of 5 K, the recorded TE power density is observed to be 12 μW/cm2 by shortening the Si-NWs length and suppressing the parasitic thermal resistance of the Si substrate. The demonstration paves a pathway to develop cost-effective autonomous internet-of-things applications that utilize the environmental and body heats.

KW - CMOS process

KW - Si nanowire (NW)

KW - energy harvesting

KW - scalability

KW - thermoelectric (TE) generator

UR - https://www.scopus.com/pages/publications/85053627698

U2 - 10.1109/TED.2018.2867845

DO - 10.1109/TED.2018.2867845

M3 - 文章

AN - SCOPUS:85053627698

SN - 0018-9383

VL - 65

SP - 5180

EP - 5188

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

M1 - 8467534

ER -

Modeling, simulation, fabrication, and characterization of a 10-μ W/cm² class si-nanowire thermoelectric generator for IoT applications

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Keywords

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