Mode Profiling of Semiconductor Nanowire Lasers

Dhruv Saxena; Fan Wang; Qian Gao; Sudha Mokkapati; Hark Hoe Tan; Chennupati Jagadish

doi:10.1021/acs.nanolett.5b01713

Mode Profiling of Semiconductor Nanowire Lasers

Dhruv Saxena^*
, Fan Wang
, Qian Gao
, Sudha Mokkapati
, Hark Hoe Tan
, Chennupati Jagadish

^*Corresponding author for this work

Australian National University

Research output: Contribution to journal › Article › peer-review

80 Scopus citations

Abstract

We experimentally determine the lasing mode(s) in optically pumped semiconductor nanowire lasers. The spatially resolved and angle-resolved far-field emission profiles of single InP nanowire lasers lying horizontally on a SiO₂ substrate are characterized in a microphotoluminescence (μ-PL) setup. The experimentally obtained polarization dependent far-field profiles match very well with numerical simulations and enable unambiguous identification of the lasing mode(s). This technique can be applied to characterize lasing modes in other type of nanolasers that are integrated on a substrate in either vertical or horizontal configurations.

Original language	English
Pages (from-to)	5342-5348
Number of pages	7
Journal	Nano Letters
Volume	15
Issue number	8
DOIs	https://doi.org/10.1021/acs.nanolett.5b01713
State	Published - 12 Aug 2015
Externally published	Yes

Keywords

Fourier space imaging
Nanowire lasers
far-field characterization
mode characterization
semiconductor nanowires

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10.1021/acs.nanolett.5b01713

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title = "Mode Profiling of Semiconductor Nanowire Lasers",

abstract = "We experimentally determine the lasing mode(s) in optically pumped semiconductor nanowire lasers. The spatially resolved and angle-resolved far-field emission profiles of single InP nanowire lasers lying horizontally on a SiO2 substrate are characterized in a microphotoluminescence (μ-PL) setup. The experimentally obtained polarization dependent far-field profiles match very well with numerical simulations and enable unambiguous identification of the lasing mode(s). This technique can be applied to characterize lasing modes in other type of nanolasers that are integrated on a substrate in either vertical or horizontal configurations.",

keywords = "Fourier space imaging, Nanowire lasers, far-field characterization, mode characterization, semiconductor nanowires",

author = "Dhruv Saxena and Fan Wang and Qian Gao and Sudha Mokkapati and Tan, \{Hark Hoe\} and Chennupati Jagadish",

note = "Publisher Copyright: {\textcopyright} 2015 American Chemical Society.",

year = "2015",

month = aug,

day = "12",

doi = "10.1021/acs.nanolett.5b01713",

language = "英语",

volume = "15",

pages = "5342--5348",

journal = "Nano Letters",

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TY - JOUR

T1 - Mode Profiling of Semiconductor Nanowire Lasers

AU - Saxena, Dhruv

AU - Wang, Fan

AU - Gao, Qian

AU - Mokkapati, Sudha

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

PY - 2015/8/12

Y1 - 2015/8/12

N2 - We experimentally determine the lasing mode(s) in optically pumped semiconductor nanowire lasers. The spatially resolved and angle-resolved far-field emission profiles of single InP nanowire lasers lying horizontally on a SiO2 substrate are characterized in a microphotoluminescence (μ-PL) setup. The experimentally obtained polarization dependent far-field profiles match very well with numerical simulations and enable unambiguous identification of the lasing mode(s). This technique can be applied to characterize lasing modes in other type of nanolasers that are integrated on a substrate in either vertical or horizontal configurations.

AB - We experimentally determine the lasing mode(s) in optically pumped semiconductor nanowire lasers. The spatially resolved and angle-resolved far-field emission profiles of single InP nanowire lasers lying horizontally on a SiO2 substrate are characterized in a microphotoluminescence (μ-PL) setup. The experimentally obtained polarization dependent far-field profiles match very well with numerical simulations and enable unambiguous identification of the lasing mode(s). This technique can be applied to characterize lasing modes in other type of nanolasers that are integrated on a substrate in either vertical or horizontal configurations.

KW - Fourier space imaging

KW - Nanowire lasers

KW - far-field characterization

KW - mode characterization

KW - semiconductor nanowires

UR - https://www.scopus.com/pages/publications/84939199740

U2 - 10.1021/acs.nanolett.5b01713

DO - 10.1021/acs.nanolett.5b01713

M3 - 文章

AN - SCOPUS:84939199740

SN - 1530-6984

VL - 15

SP - 5342

EP - 5348

JO - Nano Letters

JF - Nano Letters

IS - 8

ER -

Mode Profiling of Semiconductor Nanowire Lasers

Abstract

Keywords

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