Mobility measurement based on visualized electric field migration in organic field-effect transistors

Takaaki Manaka; Fei Liu; Martin Weis; Mitsumasa Iwamoto

doi:10.1143/APEX.2.061501

Mobility measurement based on visualized electric field migration in organic field-effect transistors

Takaaki Manaka^*
, Fei Liu
, Martin Weis
, Mitsumasa Iwamoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Based on the transient electric field migration directly probed by the time-resolved microscopic optical second-harmonic generation (TRM-SHG) technique, we developed a "dynamic" approach to evaluate the carrier mobility in organic field-effect transistor (OFET). The accuracy of this potential- and current-independent approach was well confirmed by computational simulations and a comparison with the conventional mobility measured by OFET transfer characteristics.

Original language	English
Article number	061501
Journal	Applied Physics Express
Volume	2
Issue number	6
DOIs	https://doi.org/10.1143/APEX.2.061501
State	Published - Jun 2009
Externally published	Yes

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@article{e131efe951064cdf98208e3265af2c3e,

title = "Mobility measurement based on visualized electric field migration in organic field-effect transistors",

abstract = "Based on the transient electric field migration directly probed by the time-resolved microscopic optical second-harmonic generation (TRM-SHG) technique, we developed a {"}dynamic{"} approach to evaluate the carrier mobility in organic field-effect transistor (OFET). The accuracy of this potential- and current-independent approach was well confirmed by computational simulations and a comparison with the conventional mobility measured by OFET transfer characteristics.",

author = "Takaaki Manaka and Fei Liu and Martin Weis and Mitsumasa Iwamoto",

year = "2009",

month = jun,

doi = "10.1143/APEX.2.061501",

language = "英语",

volume = "2",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "6",

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T1 - Mobility measurement based on visualized electric field migration in organic field-effect transistors

AU - Manaka, Takaaki

AU - Liu, Fei

AU - Weis, Martin

AU - Iwamoto, Mitsumasa

PY - 2009/6

Y1 - 2009/6

N2 - Based on the transient electric field migration directly probed by the time-resolved microscopic optical second-harmonic generation (TRM-SHG) technique, we developed a "dynamic" approach to evaluate the carrier mobility in organic field-effect transistor (OFET). The accuracy of this potential- and current-independent approach was well confirmed by computational simulations and a comparison with the conventional mobility measured by OFET transfer characteristics.

AB - Based on the transient electric field migration directly probed by the time-resolved microscopic optical second-harmonic generation (TRM-SHG) technique, we developed a "dynamic" approach to evaluate the carrier mobility in organic field-effect transistor (OFET). The accuracy of this potential- and current-independent approach was well confirmed by computational simulations and a comparison with the conventional mobility measured by OFET transfer characteristics.

UR - https://www.scopus.com/pages/publications/68049114768

U2 - 10.1143/APEX.2.061501

DO - 10.1143/APEX.2.061501

M3 - 文章

AN - SCOPUS:68049114768

SN - 1882-0778

VL - 2

JO - Applied Physics Express

JF - Applied Physics Express

IS - 6

M1 - 061501

ER -

Mobility measurement based on visualized electric field migration in organic field-effect transistors

Abstract

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