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Mn4-xGaxN Thin Films for Ferrimagnetic Spintronics

  • Lucy Prendeville*
  • , Yangkun He
  • , Pilar Jiménez Cavero
  • , Simon Lenne
  • , J. M.D. Coey
  • , Karsten Rode
  • *Corresponding author for this work
  • Trinity College Dublin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Ferrimagnetic compensation in Mn4-xGaxN (0<x<0.27) thin films grown by sputtering on (001) MgO is determined from magnetisation and Anomalous Hall effect measurements and compared with results on the bulk material. Compensation appears in films with x >0.15 and it occurs at 235 K when x = 0.18. A greater amount of Ga-doping is required to achieve compensation in the bulk, where room-temperature compensation is at x = 0.26. The differences are discussed in terms of Ga site occupancy in the Mn4N structure, and an effect of the change of easy axis of the triangular ferrimagnetic spin structure from [111] in the bulk to [001] in the tetragonally-distorted films.

Original languageEnglish
Title of host publication2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350338362
DOIs
StatePublished - 2023
Externally publishedYes
Event2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Sendai, Japan
Duration: 15 May 202319 May 2023

Publication series

Name2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings

Conference

Conference2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023
Country/TerritoryJapan
CitySendai
Period15/05/2319/05/23

Keywords

  • Anomalous Hall effect
  • Compensated Ferrimagnet
  • MnGaN thin films
  • Non-collinear spin structure

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