Mixed-mode analysis of different mode silicon nanowire transistors-based inverter

In this paper, we focused on the comparison and analysis of the performance of inversion-mode (IM), accumulation-mode (AM), and junctionless (JL) silicon nanowire field-effect transistors (NWTs)-based inverter. The effects of the radius, equivalent oxide thickness and source/drain doping in the different mode nanowire device structure are investigated. The capacitance components and transient characteristics, which determine the behavior of devices in the circuits, are studied and compared among different mode nanowire devices. The mixed-mode circuit simulations have been performed for the inverter circuit and three-stage ring oscillator consist of n-type and p-type IM/AM/JL NWTs. JL NWTs show lower Miller capacitance which contributes to suppressing the overshoot effect in the circuits. Results of these simulations can give insights into the in-circuit behavior of these future generation devices.