Misalignment measurement in electron beam lithography from multi-scale grid by sampling Moiré method

Measuring misalignment in electron beam lithography is crucial for exploring methods to improve alignment precision. In this study, we propose to use a newly designed multi-scale grid and the sampling moiré method, to characterize electron beam lithography misalignment quantitatively, with high accuracy in a wide field of view. The multi-scale grid is composed of gradually varying grid dots, featuring both 1 μm and 20 μm pitches. The distributions of displacement and misalignment of the Crestec electron beam etching equipment in horizontal and vertical directions in different view fields were obtained. The distributions of misalignment on the 100 nm scale were detected. The research results indicate that the causes of manufacturing errors are not only stitching errors between different writing fields, but also etching errors within each writing field. This study first extends the sampling moiré technique to the field of misalignment measurement.