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Microstructural improvement of sputtered ZrO2 thin films by substrate biasing

  • A. P. Huang
  • , Paul K. Chu*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We have fabricated zirconia (ZrO2) thin films on Si(1 0 0) wafers that possess excellent crystallinity and orientation. Furthermore, the interfacial properties between the thin films and Si substrate have been improved by means of substrate biasing. The influence of the substrate bias on the interfacial and microstructural characteristics of the ZrO2 thin films has been investigated in details. Our results show that by applying a suitable bias to the Si substrate, the microstructure of ZrO2 thin films becomes more ordered and the interfacial by-products can be suppressed. The effects and mechanism of the bias on the microstructure of the thin films are described.

Original languageEnglish
Pages (from-to)244-247
Number of pages4
JournalMaterials Science and Engineering: B
Volume121
Issue number3
DOIs
StatePublished - 15 Aug 2005
Externally publishedYes

Keywords

  • Dielectrics
  • Sputtering
  • Substrate bias
  • ZrO

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