TY - GEN
T1 - Method to predict lifetime of IGBT under power cycling based-on fast electro-thermo-mechanical model
AU - Jiang, Maogong
AU - Fu, Guicui
AU - Leng, Hongyan
AU - Wan, Bo
AU - Cheng, Yu
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/5/30
Y1 - 2018/5/30
N2 - Discrete insulated gate bipolar transistor (IGBT) is one of most important and fragile components in power system. Its lifetime profile is usually described as periodic temperature swing caused by power dissipation and environmental change. Since the reliability issue, especially lifetime assessment, is an effective method to evaluate the reliability of component and system, an effective model should be established to predict the lifetime under power cycling condition. In this paper, a fast coupling model is established by a novel method). An electro-thermal model is established in Simulink by Fourier-based solution. In COMSOL multi-physics simulation platform, a thermo-mechanical model for discrete package is established and the thermal and mechanical character can be obtained by finite element method. The fast electro-thermo-mechanical Model established in this paper can be used in lifetime prediction of discrete FS IGBT.
AB - Discrete insulated gate bipolar transistor (IGBT) is one of most important and fragile components in power system. Its lifetime profile is usually described as periodic temperature swing caused by power dissipation and environmental change. Since the reliability issue, especially lifetime assessment, is an effective method to evaluate the reliability of component and system, an effective model should be established to predict the lifetime under power cycling condition. In this paper, a fast coupling model is established by a novel method). An electro-thermal model is established in Simulink by Fourier-based solution. In COMSOL multi-physics simulation platform, a thermo-mechanical model for discrete package is established and the thermal and mechanical character can be obtained by finite element method. The fast electro-thermo-mechanical Model established in this paper can be used in lifetime prediction of discrete FS IGBT.
UR - https://www.scopus.com/pages/publications/85048884630
U2 - 10.1109/EuroSimE.2018.8369921
DO - 10.1109/EuroSimE.2018.8369921
M3 - 会议稿件
AN - SCOPUS:85048884630
T3 - 2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018
SP - 1
EP - 6
BT - 2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018
Y2 - 15 April 2018 through 18 April 2018
ER -