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Metal-insulator transition at a depleted LaAlO3/SrTiO 3 interface: Evidence for charge transfer induced by SrTiO 3 phase transitions

  • W. M. Lü*
  • , X. Wang
  • , Z. Q. Liu
  • , S. Dhar
  • , A. Annadi
  • , K. Gopinadhan
  • , Roy Barman A
  • , H. B. Su
  • , T. Venkatesan
  • , Ariando
  • *Corresponding author for this work
  • National University of Singapore
  • Nanyang Technological University

Research output: Contribution to journalArticlepeer-review

Abstract

Two anomalous bias dependent resistive peaks induced by the SrTiO 3 structural phase transitions at 55 and 110 K were observed in a LaAlO3/SrTiO3 and Nb:SrTiO3 rectifying junction when the LaAlO3/SrTiO3 was depleted under reverse bias. At these transition temperatures, the barrier between LaAlO3/ SrTiO3 and Nb:SrTiO3 showed abrupt changes in the tunneling energy under forward bias. The peak at 110 K was an insulator-metal phase transition while the peak at 55 K was a metal-insulator one. We propose that the phase transitions of the SrTiO3 substrate influence the charge transfer to the LaAlO3/SrTiO3 layer, giving rise to these anomalous resistive peaks.

Original languageEnglish
Article number172103
JournalApplied Physics Letters
Volume99
Issue number17
DOIs
StatePublished - 24 Oct 2011
Externally publishedYes

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