Abstract
Two anomalous bias dependent resistive peaks induced by the SrTiO 3 structural phase transitions at 55 and 110 K were observed in a LaAlO3/SrTiO3 and Nb:SrTiO3 rectifying junction when the LaAlO3/SrTiO3 was depleted under reverse bias. At these transition temperatures, the barrier between LaAlO3/ SrTiO3 and Nb:SrTiO3 showed abrupt changes in the tunneling energy under forward bias. The peak at 110 K was an insulator-metal phase transition while the peak at 55 K was a metal-insulator one. We propose that the phase transitions of the SrTiO3 substrate influence the charge transfer to the LaAlO3/SrTiO3 layer, giving rise to these anomalous resistive peaks.
| Original language | English |
|---|---|
| Article number | 172103 |
| Journal | Applied Physics Letters |
| Volume | 99 |
| Issue number | 17 |
| DOIs | |
| State | Published - 24 Oct 2011 |
| Externally published | Yes |
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