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Mechanism simulation of integrated circuit interconnection electromigration failure

  • Beihang University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The existing life prediction model does not reflect the degradation law of the electrical properties of the interconnect during electromigration process, so there are great limitations in its practical application. This research developed a new failure mechanism degradation model to describe the law of the interconnect performance degradation in the process of electromigration. This paper takes operational amplifier as an example to achieve the failure mechanism injection of the integrated circuit. Through the simulation, this paper shows how the response characteristics of all the measurable signal nodes of the integrated circuit changes with the occurrence and development of electromigration, and meanwhile provides technical support for circuit fault diagnosis and prediction.

Original languageEnglish
Title of host publicationConference Proceedings of the 4th International Symposium on Project Management, ISPM 2016
EditorsXi Shen Cao, Henry Zhang, Chang Bo Cheng
PublisherAussino Academic Publishing House
Pages468-473
Number of pages6
ISBN (Electronic)9781921712487
StatePublished - 2016
Event4th International Symposium on Project Management, ISPM 2016 - Wuhan, China
Duration: 9 Jul 201610 Jul 2016

Publication series

NameConference Proceedings of the 4th International Symposium on Project Management, ISPM 2016

Conference

Conference4th International Symposium on Project Management, ISPM 2016
Country/TerritoryChina
CityWuhan
Period9/07/1610/07/16

Keywords

  • Circuit fault simulation
  • Electro migration
  • Failure mechanism injection
  • Failure model

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