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Mechanical properties of hydrogenated nanocrystalline silicon thin film studied by finite element method

  • X. Wang
  • , J. Wang*
  • , S. Yang
  • *Corresponding author for this work
  • Beihang University

Research output: Contribution to journalArticlepeer-review

Abstract

In this research, hydrogenated nanocrystalline silicon (nc-Si:H) thin films were fabricated by using plasma enhanced chemical vapour deposition system. The finite element model of nanoindentation was established to simulate the mechanical properties of a nc-Si:H thin film. By comparing numerical simulation data with experimental data, the correctness of the model was validated. The mechanical properties of nc-Si:H thin films obtained were: Young's modulus of 45 GPa, yield stress of 4·5 MPa, Poisson's ratio of 0·3 and the hardness was calculated to be 2·5 GPa.

Original languageEnglish
Pages (from-to)S41017-S41020
JournalMaterials Research Innovations
Volume18
DOIs
StatePublished - 1 Jul 2014

Keywords

  • Finite element method
  • Hydrogenated nanocrystalline silicon thin
  • Mechanical properties

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