Measurements of loss and gain of optically pumped InGaAs semiconductor lasers based on the photoluminescence spectra from dual facets

  • Y. Jia
  • , Q. N. Yu
  • , W. Lu
  • , J. Zhang
  • , X. Zhang
  • , Y. Q. Ning
  • , J. Wu*
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, the loss and gain characteristics of optically-pumped InGaAs/GaAs quantum well lasers are measured based on the photoluminescence spectra from dual facets of a single laser device. The device is pumped by 808nm fiber coupled semiconductor lasers controlled with pulsing signal and beam shaping system to reduce the thermal effect. The result of loss spectra is consistent with gain spectra well. In addition, the special double-peak configuration in the loss and gain spectra is observed and analyzed, in term of the strain mechanism and band structure of InGaAs quantum well. The results will be very helpful to the study and design of the InGaAs semiconductor lasers.

Original languageEnglish
Title of host publicationAOPC 2017
Subtitle of host publicationLaser Components, Systems, and Applications
EditorsLong Zhang, Lan Jiang, Shibin Jiang, Lijun Wang
PublisherSPIE
ISBN (Electronic)9781510613959
DOIs
StatePublished - 2017
EventApplied Optics and Photonics China: Laser Components, Systems, and Applications, AOPC 2017 - Beijing, China
Duration: 4 Jun 20176 Jun 2017

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10457
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceApplied Optics and Photonics China: Laser Components, Systems, and Applications, AOPC 2017
Country/TerritoryChina
CityBeijing
Period4/06/176/06/17

Keywords

  • Gain and loss
  • InGaAs/GaAs quantum well lasers
  • optical pump

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