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Measurement of magnetization using domain compressibility in CoFeB films with perpendicular anisotropy

  • N. Vernier
  • , J. P. Adam
  • , S. Eimer
  • , G. Agnus
  • , T. Devolder
  • , T. Hauet
  • , B. Ocker
  • , F. Garcia
  • , D. Ravelosona
  • Université Paris-Saclay
  • Centre de Nanosciences et de Nanotechnologies
  • Institut Jean Lamour
  • Singulus Technologies

Research output: Contribution to journal › Article › peer-review

Abstract

We present a method to map the saturation magnetization of soft ultrathin films with perpendicular anisotropy, and we illustrate it to assess the compositional dependence of the magnetization of CoFeB(1 nm)/MgO films. The method relies on the measurement of the dipolar repulsion of parallel domain walls that define a linear domain. The film magnetization is linked to the field compressibility of the domain. The method also yields the minimal distance between two walls before their merging, which sets a practical limit to the storage density in spintronic devices using domain walls as storage entities.

Original languageEnglish
Article number122404
JournalApplied Physics Letters
Volume104
Issue number12
DOIs
StatePublished - 24 Mar 2014
Externally publishedYes

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