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Magnetization reorientation induced by interfacial structures in ultrathin disordered FePt film sandwiched by SiO 2 layers

  • Guang Yang
  • , Jing Yan Zhang
  • , Shou Guo Wang*
  • , Shao Long Jiang
  • , Yun Chi Zhao
  • , Qi Di Ma
  • , Chao Wang
  • , Bo Wen Dong
  • , Jia Long Liu
  • , Ying Zhang
  • , Young Sun
  • , Zheng Long Wu
  • , Guang Hua Yu
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In general, ultrathin disordered FePt film exhibits in-plane magnetic anisotropy due to large demagnetization fields and negligible volume anisotropy. Here, we demonstrated that magnetization reorientation from in-plane to out-of-plane takes place when ultrathin disordered FePt film is sandwiched by amorphous SiO 2 layers and annealed at 350 °C. Based on the interfacial and structural analysis from X-ray photoelectron spectroscopy and high resolution transmission electron microscopy, the reorientation originates from the electronic structural changes because of strong bonding between Fe and O atoms at the top FePt/SiO 2 interface. This interface anisotropy plays a crucial role in the magnetic behaviour, resulting in magnetization reorientation of ultrathin disordered FePt film.

Original languageEnglish
Pages (from-to)489-493
Number of pages5
JournalApplied Surface Science
Volume353
DOIs
StatePublished - 30 Oct 2015
Externally publishedYes

Keywords

  • Interfacial electronic structures
  • Magnetization reorientation
  • X-ray photoelectron spectroscopy

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