Magnetic impurity mediated ultrafast electron dynamics in the carrier-density-tuned topological insulator V0.04(BixSb1-x)2Te3

T. Xu; M. Wang; H. L. Zhu; W. J. Liu; T. C. Niu; A. Li; B. Gao; Y. Ishida; S. Shin; A. Kimura; M. Ye; S. Qiao

doi:10.1103/PhysRevB.99.094308

Magnetic impurity mediated ultrafast electron dynamics in the carrier-density-tuned topological insulator V0.04(BixSb1-x)2Te3

T. Xu
, M. Wang
, H. L. Zhu
, W. J. Liu
, T. C. Niu
, A. Li
, B. Gao
, Y. Ishida
, S. Shin
, A. Kimura
, M. Ye
, S. Qiao

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We investigated the ultrafast Dirac-electron dynamics on the surface of a magnetically doped topological-insulator (TI) system, V0.04(BixSb1-x)2Te3. Even when the Fermi level is located around the Dirac point of the topological surface states (TSSs), the recovery was accomplished shortly, within 3 ps; namely, a bottleneck-type slowing of the recovery was not observed. Besides, the recovery was independent of energy. The unique shortness and independence can be ascribed to the s-d interaction between the TSSs and the impurity states of V formed near the Fermi level. Magnetic doping thus provides a new route to control the nonequilibrium dynamics on a TI surface.

Original language	English
Article number	094308
Journal	Physical Review B
Volume	99
Issue number	9
DOIs	https://doi.org/10.1103/PhysRevB.99.094308
State	Published - 21 Mar 2019
Externally published	Yes

Access to Document

10.1103/PhysRevB.99.094308

Cite this

@article{c636dc7562c940fcb860a1dc362d7958,

title = "Magnetic impurity mediated ultrafast electron dynamics in the carrier-density-tuned topological insulator V0.04(BixSb1-x)2Te3",

abstract = "We investigated the ultrafast Dirac-electron dynamics on the surface of a magnetically doped topological-insulator (TI) system, V0.04(BixSb1-x)2Te3. Even when the Fermi level is located around the Dirac point of the topological surface states (TSSs), the recovery was accomplished shortly, within 3 ps; namely, a bottleneck-type slowing of the recovery was not observed. Besides, the recovery was independent of energy. The unique shortness and independence can be ascribed to the s-d interaction between the TSSs and the impurity states of V formed near the Fermi level. Magnetic doping thus provides a new route to control the nonequilibrium dynamics on a TI surface.",

author = "T. Xu and M. Wang and Zhu, \{H. L.\} and Liu, \{W. J.\} and Niu, \{T. C.\} and A. Li and B. Gao and Y. Ishida and S. Shin and A. Kimura and M. Ye and S. Qiao",

note = "Publisher Copyright: {\textcopyright} 2019 American Physical Society.",

year = "2019",

month = mar,

day = "21",

doi = "10.1103/PhysRevB.99.094308",

language = "英语",

volume = "99",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

number = "9",

}

TY - JOUR

T1 - Magnetic impurity mediated ultrafast electron dynamics in the carrier-density-tuned topological insulator V0.04(BixSb1-x)2Te3

AU - Xu, T.

AU - Wang, M.

AU - Zhu, H. L.

AU - Liu, W. J.

AU - Niu, T. C.

AU - Li, A.

AU - Gao, B.

AU - Ishida, Y.

AU - Shin, S.

AU - Kimura, A.

AU - Ye, M.

AU - Qiao, S.

PY - 2019/3/21

Y1 - 2019/3/21

N2 - We investigated the ultrafast Dirac-electron dynamics on the surface of a magnetically doped topological-insulator (TI) system, V0.04(BixSb1-x)2Te3. Even when the Fermi level is located around the Dirac point of the topological surface states (TSSs), the recovery was accomplished shortly, within 3 ps; namely, a bottleneck-type slowing of the recovery was not observed. Besides, the recovery was independent of energy. The unique shortness and independence can be ascribed to the s-d interaction between the TSSs and the impurity states of V formed near the Fermi level. Magnetic doping thus provides a new route to control the nonequilibrium dynamics on a TI surface.

AB - We investigated the ultrafast Dirac-electron dynamics on the surface of a magnetically doped topological-insulator (TI) system, V0.04(BixSb1-x)2Te3. Even when the Fermi level is located around the Dirac point of the topological surface states (TSSs), the recovery was accomplished shortly, within 3 ps; namely, a bottleneck-type slowing of the recovery was not observed. Besides, the recovery was independent of energy. The unique shortness and independence can be ascribed to the s-d interaction between the TSSs and the impurity states of V formed near the Fermi level. Magnetic doping thus provides a new route to control the nonequilibrium dynamics on a TI surface.

UR - https://www.scopus.com/pages/publications/85064112087

U2 - 10.1103/PhysRevB.99.094308

DO - 10.1103/PhysRevB.99.094308

M3 - 文章

AN - SCOPUS:85064112087

SN - 2469-9950

VL - 99

JO - Physical Review B

JF - Physical Review B

IS - 9

M1 - 094308

ER -

Magnetic impurity mediated ultrafast electron dynamics in the carrier-density-tuned topological insulator V0.04(BixSb1-x)2Te3

Abstract

Access to Document

Other files and links

Fingerprint

Cite this