Abstract
Architectures based on a magnetic domain wall (DW) can store and process information at a high speed in a nonvolatile manner with ultra-low power consumption. Recently, transition-metal rare earth metal alloy-based ferrimagnets have attracted a considerable amount of attention for the ultrafast current-driven DW motion. However, the high-speed DW motion is subject to film inhomogeneity and device edge defects, causing challenges in controlling the DW motion and hindering practical application. In this work, we demonstrate a strategy for precisely engineering the DW energy landscape by locally modifying the compensation state in a ferrimagnet via ion irradiation by using the focused ion beam technique. A diode-like DW motion behavior is observed at the lateral junction interface, i.e., the boundary between irradiated and non-irradiated CoGd, enabling selective control over DW pinning and depinning at specific locations. Our work provides insight into the development of next-generation DW-based ferrimagnetic racetrack memory and logic devices.
| Original language | English |
|---|---|
| Pages (from-to) | 261-267 |
| Number of pages | 7 |
| Journal | Nano Letters |
| Volume | 25 |
| Issue number | 1 |
| DOIs | |
| State | Published - 8 Jan 2025 |
Keywords
- Ga ion irradiation
- domain wall motion
- energy barrier
- ferrimagnetic
- racetrack
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