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Magnetic coupling properties of Mn-doped AlN nanowires: First-principles calculations

  • Yujuan Zhang
  • , Hongliang Shi
  • , Rongwu Li
  • , Ping Zhang*
  • *Corresponding author for this work
  • IAPCM
  • Beijing Normal University
  • CAS - Institute of Semiconductors

Research output: Contribution to journalArticlepeer-review

Abstract

Based on first-principles within the framework of the density functional theory, we have studied the magnetic coupling properties of Mn-doped AlN nanowires. By analyzing the results of different Mn-doped AlN nanowires, we found that for the passivated nanowire, ferromagnetic state is more stable, while for the unpassivated nanowire, the favorable state transits into anti-ferromagnetic state, which can be well explained by the band coupling model. The results indicate that the degree of surface passivation of dangling bonds is an important factor in the magnetic properties of doped nanowires.

Original languageEnglish
Pages (from-to)1686-1689
Number of pages4
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume375
Issue number15
DOIs
StatePublished - 11 Apr 2011
Externally publishedYes

Keywords

  • Level splitting
  • Magnetic semiconductor
  • Nanowire

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