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Low-Temperature-Sintered Nano-Ag Film for Power Electronics Packaging

  • Limin Ma
  • , Yuchen Wang
  • , Qiang Jia*
  • , Hongqiang Zhang
  • , Yishu Wang
  • , Dan Li
  • , Guisheng Zou
  • , Fu Guo*
  • *Corresponding author for this work
  • Beijing University of Technology
  • Tsinghua University
  • Beijing Union University

Research output: Contribution to journalArticlepeer-review

Abstract

Nano-Ag paste sintering has attracted much attention for high-power electronics packaging owing to its excellent electrical conductivity, thermal conductivity, and oxidation resistance. However, it requires printing and pre-heating before the die attach process, and the organics in the paste do not evaporate easily for large-area die attachment. In this work, a nano-Ag film (~ 100 μm thickness) with only 2.1% organics is developed to realize low-temperature bonding, which is compatible with the current sintering bonding process. The optimized preparation parameters of the nano-Ag films was optimized as 180°C-5 min. The characteristics and sintering mechanism of nano-Ag film are discussed. The results showed that the micro/nanostructure on the surface of nano-Ag film with a small amount of organic material is responsible for the low-temperature sintering ability, which realized 24.01 MPa shear strength at 200°C. The fracture was analyzed and failure modes are discussed. The easy-to-use features and low-temperature sintering ability make the nano-Ag film a promising die-attach material with high reliability. Graphical Abstract: [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)228-237
Number of pages10
JournalJournal of Electronic Materials
Volume53
Issue number1
DOIs
StatePublished - Jan 2024

Keywords

  • low-temperature bonding
  • mechanical properties
  • Nano-Ag films
  • sintering mechanism

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