Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface

Shengwei Zeng; Weiming Lü; Zhen Huang; Zhiqi Liu; Kun Han; Kalon Gopinadhan; Changjian Li; Rui Guo; Wenxiong Zhou; Haijiao Harsan Ma; Linke Jian; Thirumalai Venkatesan; Ariando

doi:10.1021/acsnano.6b00409

Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface

Shengwei Zeng
, Weiming Lü
, Zhen Huang
, Zhiqi Liu
, Kun Han
, Kalon Gopinadhan
, Changjian Li
, Rui Guo
, Wenxiong Zhou
, Haijiao Harsan Ma
, Linke Jian
, Thirumalai Venkatesan^*
, Ariando

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here, we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO₃/SrTiO₃ (Lao/STO) interface through ionic liquid-assisted electric field effect. With a change of the gate voltages, the depletion of charge carrier and the resultant enhancement of electron mobility up to 19 380 cm²/(V s) are realized, leading to quantum oscillations of the conductivity at the Lao/STO interface. The present results suggest that high-mobility oxide interfaces, which exhibit quantum phenomena, could be obtained by ionic liquid-assisted field effect.

Original language	English
Pages (from-to)	4532-4537
Number of pages	6
Journal	ACS Nano
Volume	10
Issue number	4
DOIs	https://doi.org/10.1021/acsnano.6b00409
State	Published - 26 Apr 2016
Externally published	Yes

Keywords

Ionic liquid
LaAlO/SrTiO interfaces
Shubnikovade Haas (SdH) oscillation
electric field effect
electronic double layer transistors (EDLT)
mobility

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10.1021/acsnano.6b00409

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@article{e8d41b97708440e2879b0a41ac86f552,

title = "Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface",

abstract = "Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here, we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO3/SrTiO3 (Lao/STO) interface through ionic liquid-assisted electric field effect. With a change of the gate voltages, the depletion of charge carrier and the resultant enhancement of electron mobility up to 19 380 cm2/(V s) are realized, leading to quantum oscillations of the conductivity at the Lao/STO interface. The present results suggest that high-mobility oxide interfaces, which exhibit quantum phenomena, could be obtained by ionic liquid-assisted field effect.",

keywords = "Ionic liquid, LaAlO/SrTiO interfaces, Shubnikovade Haas (SdH) oscillation, electric field effect, electronic double layer transistors (EDLT), mobility",

author = "Shengwei Zeng and Weiming L{\"u} and Zhen Huang and Zhiqi Liu and Kun Han and Kalon Gopinadhan and Changjian Li and Rui Guo and Wenxiong Zhou and Ma, \{Haijiao Harsan\} and Linke Jian and Thirumalai Venkatesan and Ariando",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = apr,

day = "26",

doi = "10.1021/acsnano.6b00409",

language = "英语",

volume = "10",

pages = "4532--4537",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

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TY - JOUR

T1 - Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface

AU - Zeng, Shengwei

AU - Lü, Weiming

AU - Huang, Zhen

AU - Liu, Zhiqi

AU - Han, Kun

AU - Gopinadhan, Kalon

AU - Li, Changjian

AU - Guo, Rui

AU - Zhou, Wenxiong

AU - Ma, Haijiao Harsan

AU - Jian, Linke

AU - Venkatesan, Thirumalai

AU - Ariando,

PY - 2016/4/26

Y1 - 2016/4/26

N2 - Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here, we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO3/SrTiO3 (Lao/STO) interface through ionic liquid-assisted electric field effect. With a change of the gate voltages, the depletion of charge carrier and the resultant enhancement of electron mobility up to 19 380 cm2/(V s) are realized, leading to quantum oscillations of the conductivity at the Lao/STO interface. The present results suggest that high-mobility oxide interfaces, which exhibit quantum phenomena, could be obtained by ionic liquid-assisted field effect.

AB - Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here, we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO3/SrTiO3 (Lao/STO) interface through ionic liquid-assisted electric field effect. With a change of the gate voltages, the depletion of charge carrier and the resultant enhancement of electron mobility up to 19 380 cm2/(V s) are realized, leading to quantum oscillations of the conductivity at the Lao/STO interface. The present results suggest that high-mobility oxide interfaces, which exhibit quantum phenomena, could be obtained by ionic liquid-assisted field effect.

KW - Ionic liquid

KW - LaAlO/SrTiO interfaces

KW - Shubnikovade Haas (SdH) oscillation

KW - electric field effect

KW - electronic double layer transistors (EDLT)

KW - mobility

UR - https://www.scopus.com/pages/publications/84967189169

U2 - 10.1021/acsnano.6b00409

DO - 10.1021/acsnano.6b00409

M3 - 文章

AN - SCOPUS:84967189169

SN - 1936-0851

VL - 10

SP - 4532

EP - 4537

JO - ACS Nano

JF - ACS Nano

IS - 4

ER -

Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface

Abstract

Keywords

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