Abstract
Without catalysis, hexagonal zinc oxide (ZnO) microcrystals were successfully grown on (0001) sapphire substrate in a home made chemical vapor deposition system under atmospheric pressure. A rapid lateral growth at rate of 15 l m/h and a dense growth of ZnO crystals were realized in the growth regions of 800 and 850 °C, respectively. The growth mechanisms were explained similarly with the selective epitaxy. The high quality of the crystals was attested by the X-ray diffraction pattern, Raman scattering and temperature dependent photoluminescence. These results showed the potential of lateral growth ZnO crystals at low cost.
| Original language | English |
|---|---|
| Pages (from-to) | 1908-1912 |
| Number of pages | 5 |
| Journal | Optical Materials |
| Volume | 34 |
| Issue number | 11 |
| DOIs | |
| State | Published - Sep 2012 |
Keywords
- Chemical vapor deposition
- Growth models
- Semiconducting materials
- Zinc oxide
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