Abstract
Although aligned arrays of single-walled carbon nanotubes (SWNTs) have outstanding potential for use in broad classes of advanced semiconductor devices, the relatively large population of metallic SWNTs (m-SWNTs) that results from conventional growth techniques leads to significantly degraded performance. Recently reported methods based on thermocapillary effects that enable removal of m-SWNTs from such arrays offer exceptional levels of efficiency, but the procedures are cumbersome and require multiple processing steps. Here we present a simple, robust alternative that yields pristine arrays of purely semiconducting SWNTs (s-SWNTs) by use of irradiation with an infrared laser. Selective absorption by m-SWNTs coated with a thin organic film initiates nanoscale thermocapillary flows that lead to exposure only of the m-SWNTs. Reactive ion etching eliminates the m-SWNTs without damaging the s-SWNTs; removal of the film completes the purification. Systematic experimental studies and computational modeling of the thermal physics illuminates the essential aspects of this process. Demonstrations include use of arrays of s-SWNTs formed in this manner as semiconducting channel materials in statistically relevant numbers of transistors to achieve both high mobilities (>900 cm2 V-1 s-1) and switching ratios (>104). Statistical analysis indicates that the arrays contain at least 99.8% s-SWNTs and likely significantly higher.
| Original language | English |
|---|---|
| Pages (from-to) | 12641-12649 |
| Number of pages | 9 |
| Journal | ACS Nano |
| Volume | 8 |
| Issue number | 12 |
| DOIs | |
| State | Published - 23 Dec 2014 |
Keywords
- SWNT
- TFT
- aligned array
- carbon
- infrared
- laser
- nanotube
- purification
- thin-film transistor
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