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Large-gap quantum spin Hall states in decorated stanene grown on a substrate

  • Stanford University
  • Tsinghua University
  • Collaborative Innovation Center of Quantum Matter

Research output: Contribution to journalArticlepeer-review

Abstract

Two-dimensional stanene is a promising candidate material for realizing a room-temperature quantum spin Hall (QSH) effect. Monolayer stanene has recently been fabricated by molecular beam epitaxy, but shows metallic features on a Bi2Te3(111) substrate, which motivates us to study the important influence of the substrate. Based on first-principles calculations, we find that varying substrate conditions considerably tunes the electronic properties of stanene. The supported stanene gives either trivial or QSH states, with significant Rashba splitting induced by inversion asymmetry. More importantly, large-gap (up to 0.3 eV) QSH states are realizable when growing stanene on various substrates, like the anion-terminated (111) surfaces of SrTe, PbTe, BaSe, and BaTe. These findings provide significant guidance for future research of stanene and large-gap QSH states.

Original languageEnglish
Article number081112
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume92
Issue number8
DOIs
StatePublished - 18 Aug 2015
Externally publishedYes

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