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Large Anomalous Hall Effect in a Noncoplanar Magnetic Heterostructure

  • Anke Song
  • , Jine Zhang
  • , Yequan Chen
  • , Zhizhong Zhang
  • , Xinjuan Cheng
  • , Ruijie Xu
  • , Wenzhuo Zhuang
  • , Wenxuan Sun
  • , Yong Zhang
  • , Xu Zhang
  • , Zhongqiang Chen
  • , Fengqi Song
  • , Yue Zhang*
  • , Xuechao Zhai*
  • , Yongbing Xu
  • , Weisheng Zhao
  • , Rong Zhang
  • , Xuefeng Wang*
  • *Corresponding author for this work
  • Nanjing University
  • Nanjing University of Science and Technology
  • Atom Manufacturing Institute
  • Xiamen University

Research output: Contribution to journalArticlepeer-review

Abstract

The anomalous Hall effect (AHE) occurs in magnetic systems and also unexpectedly in non-magnetic materials adjacent to magnetic insulators via the heterointerface interactions. However, the AHE in heterostructures induced by the magnetic proximity effect remains quite weak, restricting their practical device applications. Here, a large intrinsic AHE with a resistivity of 114 nΩ cm at 5 K in noncoplanar magnetic heterostructures of Cr5Te6/Pt is reported. This is the record-high AHE value among all the magnetic insulators/heavy metal heterostructures. A reversal of the AHE signal occurs due to the reconstruction of Berry curvature at the Fermi level, which is verified by the first-principles calculations. Topological spin textures at the interface are directly visualized via high-magnetic-field magnetic force microscopy, which accounts for the large AHE, as confirmed by the atomic simulations. These findings open a new avenue for exploring the large AHE in heterointerfaces and facilitate the potential applications in topological spintronic devices.

Original languageEnglish
Article number2422040
JournalAdvanced Functional Materials
Volume35
Issue number26
DOIs
StatePublished - 26 Jun 2025

Keywords

  • Berry curvature
  • CrTe thin films
  • anomalous Hall effect
  • heterostructures
  • noncoplanar magnetic structure
  • topological spin textures

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