Skip to main navigation Skip to search Skip to main content

Investigation the impact of composition on the performance of SiGe nanowire pMOSFETs by different simulation methods

  • Xianle Zhang
  • , Xiaoyan Liu
  • , Yijiao Wang
  • , Longxiang Yin
  • , Gang Du

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, the SiGe nanowire pMOSFETs (NWT) for 7nm and beyond with Ge component varies from 20% to 90% are simulated by different methods including drift-diffusion (DD) vs Monte Carlo (MC) method for transport, and the Poisson-Schrödinger solver(PS) vs the density gradient (DG) approach for quantum effect. The impact of Ge component variation on the performance of pMOSFETs is also evaluated.

Original languageEnglish
Title of host publication2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
EditorsYu-Long Jiang, Ting-Ao Tang, Ru Huang
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages35-37
Number of pages3
ISBN (Electronic)9781467397179
DOIs
StatePublished - 2016
Externally publishedYes
Event13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Hangzhou, China
Duration: 25 Oct 201628 Oct 2016

Publication series

Name2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings

Conference

Conference13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016
Country/TerritoryChina
CityHangzhou
Period25/10/1628/10/16

Fingerprint

Dive into the research topics of 'Investigation the impact of composition on the performance of SiGe nanowire pMOSFETs by different simulation methods'. Together they form a unique fingerprint.

Cite this