Investigation of structural transformation and residual stress under single femtosecond laser pulse irradiation of 4H–SiC

Silicon carbide (SiC) is an attractive semiconductor material for devices that operate under extreme conditions. However, its high hardness and chemical stability hinder micromachining. Femtosecond laser has been proposed extensively as an effective micromachining tool for SiC. However, the fundamental mechanisms of laser-material interaction during femtosecond laser irradiation process remain elusive. This paper presents a comprehensive study of the structural transformation and residual stress induced by irradiating a 4H–SiC target with a single-pulse femtosecond laser. The energy dependence of the structural characteristics at the spot center and the spatial distribution across the laser spot were determined using optical microscopy and micro-Raman spectroscopy. The effect of the laser fluence on the residual stress was discussed. The obtained results showed that no structural changes occurred at low energy, whereas bond breaking occurred among crystalline SiC (c-SiC) at high energy. A central disk with no structural transformation and no residual stress was formed for the fluence of 22.2 J/cm², owing to phase explosion-induced spluttering. Meanwhile, an inhomogeneous distribution of the structural transformation was generated from the spot centre to the edge. Based on this, threshold fluences for modification and structural transformation were proposed and calculated. The fundamental mechanisms for different laser-fluence regimes are discussed, and some suggestions for improving the surface quality are put forward. This study provides deep insights into the laser-material interaction mechanisms and is beneficial for optimising the utilisation of femtosecond laser for 4H–SiC micromachining.