Investigation of metal contacts to Nb-1.0 wt.%-doped SrTiO3

Yimin Cui; Liuwan Zhang; Rongming Wang; Jianqiang Qian

doi:10.1016/j.mseb.2007.01.011

Investigation of metal contacts to Nb-1.0 wt.%-doped SrTiO₃

Yimin Cui^*
, Liuwan Zhang
, Rongming Wang
, Jianqiang Qian

^*Corresponding author for this work

School of Physics

Tsinghua University
Beihang University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Au/Ag/Al/In contacts to Nb-1.0 wt.%-doped SrTiO₃ (NSTO) were investigated. The contacts of the Au/Ag/Al electrodes which were grown by magnetic controlled sputtering techniques were not ohmic. After annealing at different temperatures in oxygen for 30 min, better Schottky barriers could be formed in the contacts of Ag/NSTO and Au/NSTO. However, the ohmic contacts of indium to rough surface of NSTO are easy to obtain by pressing, and that to the polished surface can be obtained by melting indium with high vacuum. The specific contact resistances for different metal contacts were measured, the ohmic contacts of indium to NSTO by the two method almost have the same specific contact resistance, which is approximately 8.0 × 10^-7 Ω m².

Original language	English
Pages (from-to)	214-218
Number of pages	5
Journal	Materials Science and Engineering: B
Volume	138
Issue number	3
DOIs	https://doi.org/10.1016/j.mseb.2007.01.011
State	Published - 15 Apr 2007

Keywords

NSTO
Ohmic contacts
Schottky barrier
Specific contact resistance

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10.1016/j.mseb.2007.01.011

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title = "Investigation of metal contacts to Nb-1.0 wt.\%-doped SrTiO3",

abstract = "Au/Ag/Al/In contacts to Nb-1.0 wt.\%-doped SrTiO3 (NSTO) were investigated. The contacts of the Au/Ag/Al electrodes which were grown by magnetic controlled sputtering techniques were not ohmic. After annealing at different temperatures in oxygen for 30 min, better Schottky barriers could be formed in the contacts of Ag/NSTO and Au/NSTO. However, the ohmic contacts of indium to rough surface of NSTO are easy to obtain by pressing, and that to the polished surface can be obtained by melting indium with high vacuum. The specific contact resistances for different metal contacts were measured, the ohmic contacts of indium to NSTO by the two method almost have the same specific contact resistance, which is approximately 8.0 × 10-7 Ω m2.",

keywords = "NSTO, Ohmic contacts, Schottky barrier, Specific contact resistance",

author = "Yimin Cui and Liuwan Zhang and Rongming Wang and Jianqiang Qian",

year = "2007",

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day = "15",

doi = "10.1016/j.mseb.2007.01.011",

language = "英语",

volume = "138",

pages = "214--218",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

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}

TY - JOUR

T1 - Investigation of metal contacts to Nb-1.0 wt.%-doped SrTiO3

AU - Cui, Yimin

AU - Zhang, Liuwan

AU - Wang, Rongming

AU - Qian, Jianqiang

PY - 2007/4/15

Y1 - 2007/4/15

N2 - Au/Ag/Al/In contacts to Nb-1.0 wt.%-doped SrTiO3 (NSTO) were investigated. The contacts of the Au/Ag/Al electrodes which were grown by magnetic controlled sputtering techniques were not ohmic. After annealing at different temperatures in oxygen for 30 min, better Schottky barriers could be formed in the contacts of Ag/NSTO and Au/NSTO. However, the ohmic contacts of indium to rough surface of NSTO are easy to obtain by pressing, and that to the polished surface can be obtained by melting indium with high vacuum. The specific contact resistances for different metal contacts were measured, the ohmic contacts of indium to NSTO by the two method almost have the same specific contact resistance, which is approximately 8.0 × 10-7 Ω m2.

AB - Au/Ag/Al/In contacts to Nb-1.0 wt.%-doped SrTiO3 (NSTO) were investigated. The contacts of the Au/Ag/Al electrodes which were grown by magnetic controlled sputtering techniques were not ohmic. After annealing at different temperatures in oxygen for 30 min, better Schottky barriers could be formed in the contacts of Ag/NSTO and Au/NSTO. However, the ohmic contacts of indium to rough surface of NSTO are easy to obtain by pressing, and that to the polished surface can be obtained by melting indium with high vacuum. The specific contact resistances for different metal contacts were measured, the ohmic contacts of indium to NSTO by the two method almost have the same specific contact resistance, which is approximately 8.0 × 10-7 Ω m2.

KW - NSTO

KW - Ohmic contacts

KW - Schottky barrier

KW - Specific contact resistance

UR - https://www.scopus.com/pages/publications/33947391211

U2 - 10.1016/j.mseb.2007.01.011

DO - 10.1016/j.mseb.2007.01.011

M3 - 文章

AN - SCOPUS:33947391211

SN - 0921-5107

VL - 138

SP - 214

EP - 218

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 3

ER -

Investigation of metal contacts to Nb-1.0 wt.%-doped SrTiO₃

Abstract

Keywords

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