Abstract
We investigate a hexagonal ScAl3C3-type antiferromagnet GdZn3P3 single crystal. Compared with antiferromagnetic topological material EuM2X2 (M = Zn, Cd; X = P, As), the GdZn3P3 features an additional ZnP 3 trigonal planar units. Notably, single-crystal x-ray diffraction analysis reveals that Zn and P atoms within a trigonal planar layer exhibit significant anisotropic displacement parameters with space group P63/mmc. Meanwhile, a scanning transmission electron microscopy experiment demonstrates the presence of interstitial P atoms above and below the ZnP honeycomb lattice, suggesting potential ZnP bond instability within the ZnP3 trigonal layers. Concerning the triangular Gd 3+ layer, the magnetic susceptibility χ (T) and heat capacity measurements reveal an A-type antiferromagnetic order at TN = 4.5 K. Below TN, the in-plane χ (T) is nearly 4 times the χ (T) along c axis, indicative of strong magnetic anisotropy for salt-flux-grown GdZn3P3 crystal. The density function theory calculation shows that GdZn3P3 is an indirect semiconductor with a band gap 0.27 eV, supported by the resistivity measurement on the polycrystal sample. Interestingly, Hall measurements of metallic GdZn3P3 crystals grown via salt flux reveal a low concentration of hole carriers, consistent with the previously mentioned presence of interstitial P atoms. Furthermore, these crystals exhibit a pronounced nonlinear anomalous Hall effect below TN. In contrast, GdZn3P3 crystals grown by chemical vapor transport display weak semiconducting behavior. Despite exhibiting a similar TN, the in-plane χ (T) below TN in the vapor-transport-grown crystal is approximately half in magnitude compared to that of the salt-flux-grown sample, which supports the hypothesis of charge carrier-mediated Ruderman-Kittel-Kasuya-Yosida interactions. These findings collectively establish GdZn3P3 as a compelling model system for investigating the coupling between charge carriers and triangular lattice magnetism within a two-dimensional framework.
| Original language | English |
|---|---|
| Article number | 085147 |
| Pages (from-to) | 1-13 |
| Number of pages | 13 |
| Journal | Physical Review B |
| Volume | 113 |
| Issue number | 8 |
| DOIs | |
| State | Published - Jan 2026 |
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