Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe4GeTe2 far above room temperature

Hangtian Wang; Haichang Lu; Zongxia Guo; Ang Li; Peichen Wu; Jing Li; Weiran Xie; Zhimei Sun; Peng Li; Héloïse Damas; Anna Maria Friedel; Sylvie Migot; Jaafar Ghanbaja; Luc Moreau; Yannick Fagot-Revurat; Sébastien Petit-Watelot; Thomas Hauet; John Robertson; Stéphane Mangin; Weisheng Zhao; Tianxiao Nie

doi:10.1038/s41467-023-37917-8

Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe₄GeTe₂ far above room temperature

Hangtian Wang
, Haichang Lu^*
, Zongxia Guo
, Ang Li
, Peichen Wu
, Jing Li
, Weiran Xie
, Zhimei Sun
, Peng Li
, Héloïse Damas
, Anna Maria Friedel
, Sylvie Migot
, Jaafar Ghanbaja
, Luc Moreau
, Yannick Fagot-Revurat
, Sébastien Petit-Watelot
, Thomas Hauet
, John Robertson
, Stéphane Mangin^*
, Weisheng Zhao^*

Tianxiao Nie^*

^*Corresponding author for this work

Beihang University
Institut Jean Lamour
University of Cambridge
Auburn University
The University of Kaiserslautern-Landau

Research output: Contribution to journal › Article › peer-review

84 Scopus citations

Abstract

Despite recent advances in exfoliated vdW ferromagnets, the widespread application of 2D magnetism requires a Curie temperature (T_c) above room temperature as well as a stable and controllable magnetic anisotropy. Here we demonstrate a large-scale iron-based vdW material Fe₄GeTe₂ with the T_c reaching ~530 K. We confirmed the high-temperature ferromagnetism by multiple characterizations. Theoretical calculations suggested that the interface-induced right shift of the localized states for unpaired Fe d electrons is the reason for the enhanced T_c, which was confirmed by ultraviolet photoelectron spectroscopy. Moreover, by precisely tailoring Fe concentration we achieved arbitrary control of magnetic anisotropy between out-of-plane and in-plane without inducing any phase disorders. Our finding sheds light on the high potential of Fe₄GeTe₂ in spintronics, which may open opportunities for room-temperature application of all-vdW spintronic devices.

Original language	English
Article number	2483
Journal	Nature Communications
Volume	14
Issue number	1
DOIs	https://doi.org/10.1038/s41467-023-37917-8
State	Published - Dec 2023

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Wang, H., Lu, H., Guo, Z., Li, A., Wu, P., Li, J., Xie, W., Sun, Z., Li, P., Damas, H., Friedel, A. M., Migot, S., Ghanbaja, J., Moreau, L., Fagot-Revurat, Y., Petit-Watelot, S., Hauet, T., Robertson, J., Mangin, S., ... Nie, T. (2023). Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe₄GeTe₂ far above room temperature. Nature Communications, 14(1), Article 2483. https://doi.org/10.1038/s41467-023-37917-8

@article{0d053de43e104f93a847dfdb7bec5613,

title = "Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe4GeTe2 far above room temperature",

abstract = "Despite recent advances in exfoliated vdW ferromagnets, the widespread application of 2D magnetism requires a Curie temperature (Tc) above room temperature as well as a stable and controllable magnetic anisotropy. Here we demonstrate a large-scale iron-based vdW material Fe4GeTe2 with the Tc reaching \textasciitilde{}530 K. We confirmed the high-temperature ferromagnetism by multiple characterizations. Theoretical calculations suggested that the interface-induced right shift of the localized states for unpaired Fe d electrons is the reason for the enhanced Tc, which was confirmed by ultraviolet photoelectron spectroscopy. Moreover, by precisely tailoring Fe concentration we achieved arbitrary control of magnetic anisotropy between out-of-plane and in-plane without inducing any phase disorders. Our finding sheds light on the high potential of Fe4GeTe2 in spintronics, which may open opportunities for room-temperature application of all-vdW spintronic devices.",

author = "Hangtian Wang and Haichang Lu and Zongxia Guo and Ang Li and Peichen Wu and Jing Li and Weiran Xie and Zhimei Sun and Peng Li and H{\'e}lo{\"i}se Damas and Friedel, \{Anna Maria\} and Sylvie Migot and Jaafar Ghanbaja and Luc Moreau and Yannick Fagot-Revurat and S{\'e}bastien Petit-Watelot and Thomas Hauet and John Robertson and St{\'e}phane Mangin and Weisheng Zhao and Tianxiao Nie",

note = "Publisher Copyright: {\textcopyright} 2023, The Author(s).",

year = "2023",

month = dec,

doi = "10.1038/s41467-023-37917-8",

language = "英语",

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journal = "Nature Communications",

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Wang, H, Lu, H, Guo, Z, Li, A, Wu, P, Li, J, Xie, W, Sun, Z, Li, P, Damas, H, Friedel, AM, Migot, S, Ghanbaja, J, Moreau, L, Fagot-Revurat, Y, Petit-Watelot, S, Hauet, T, Robertson, J, Mangin, S, Zhao, W & Nie, T 2023, 'Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe₄GeTe₂ far above room temperature', Nature Communications, vol. 14, no. 1, 2483. https://doi.org/10.1038/s41467-023-37917-8

TY - JOUR

T1 - Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe4GeTe2 far above room temperature

AU - Wang, Hangtian

AU - Lu, Haichang

AU - Guo, Zongxia

AU - Li, Ang

AU - Wu, Peichen

AU - Li, Jing

AU - Xie, Weiran

AU - Sun, Zhimei

AU - Li, Peng

AU - Damas, Héloïse

AU - Friedel, Anna Maria

AU - Migot, Sylvie

AU - Ghanbaja, Jaafar

AU - Moreau, Luc

AU - Fagot-Revurat, Yannick

AU - Petit-Watelot, Sébastien

AU - Hauet, Thomas

AU - Robertson, John

AU - Mangin, Stéphane

AU - Zhao, Weisheng

AU - Nie, Tianxiao

PY - 2023/12

Y1 - 2023/12

N2 - Despite recent advances in exfoliated vdW ferromagnets, the widespread application of 2D magnetism requires a Curie temperature (Tc) above room temperature as well as a stable and controllable magnetic anisotropy. Here we demonstrate a large-scale iron-based vdW material Fe4GeTe2 with the Tc reaching ~530 K. We confirmed the high-temperature ferromagnetism by multiple characterizations. Theoretical calculations suggested that the interface-induced right shift of the localized states for unpaired Fe d electrons is the reason for the enhanced Tc, which was confirmed by ultraviolet photoelectron spectroscopy. Moreover, by precisely tailoring Fe concentration we achieved arbitrary control of magnetic anisotropy between out-of-plane and in-plane without inducing any phase disorders. Our finding sheds light on the high potential of Fe4GeTe2 in spintronics, which may open opportunities for room-temperature application of all-vdW spintronic devices.

AB - Despite recent advances in exfoliated vdW ferromagnets, the widespread application of 2D magnetism requires a Curie temperature (Tc) above room temperature as well as a stable and controllable magnetic anisotropy. Here we demonstrate a large-scale iron-based vdW material Fe4GeTe2 with the Tc reaching ~530 K. We confirmed the high-temperature ferromagnetism by multiple characterizations. Theoretical calculations suggested that the interface-induced right shift of the localized states for unpaired Fe d electrons is the reason for the enhanced Tc, which was confirmed by ultraviolet photoelectron spectroscopy. Moreover, by precisely tailoring Fe concentration we achieved arbitrary control of magnetic anisotropy between out-of-plane and in-plane without inducing any phase disorders. Our finding sheds light on the high potential of Fe4GeTe2 in spintronics, which may open opportunities for room-temperature application of all-vdW spintronic devices.

UR - https://www.scopus.com/pages/publications/85156094043

U2 - 10.1038/s41467-023-37917-8

DO - 10.1038/s41467-023-37917-8

M3 - 文章

C2 - 37120587

AN - SCOPUS:85156094043

SN - 2041-1723

VL - 14

JO - Nature Communications

JF - Nature Communications

IS - 1

M1 - 2483

ER -

Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe₄GeTe₂ far above room temperature

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