Interfacial and electrical characteristics of Al2O3 gate dielectric on fully depleted SiGe on insulator

Zengfeng Di; Miao Zhang; Weili Liu; Qinwo Shen; Suhua Luo; Zhitang Song; Chenglu Lin; Anping Huang; Paul K. Chu

doi:10.1063/1.1957109

Interfacial and electrical characteristics of Al₂O₃ gate dielectric on fully depleted SiGe on insulator

Zengfeng Di
, Miao Zhang
, Weili Liu
, Qinwo Shen
, Suhua Luo
, Zhitang Song
, Chenglu Lin
, Anping Huang
, Paul K. Chu^*

^*Corresponding author for this work

CAS - Shanghai Institute of Microsystem and Information Technology
City University of Hong Kong

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The interfacial and electrical characteristics of as-deposited or annealed A2 O3 gate dielectric films grown on fully depleted SiGe-on-insulator are investigated. An interfacial layer composed of Si Ox and Ge Ox is observed in the as-grown film. The interfacial silicate formation is effectively suppressed by Ge Ox formation. However, Ge Ox is reduced to Ge and extensive silicate formation occurs after annealing. The formation of silicate and disappearance of Ge Ox after annealing leads to a decrease in the density of the interfacial states.

Original language	English
Article number	262102
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	26
DOIs	https://doi.org/10.1063/1.1957109
State	Published - 27 Jun 2005
Externally published	Yes

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title = "Interfacial and electrical characteristics of Al2O3 gate dielectric on fully depleted SiGe on insulator",

abstract = "The interfacial and electrical characteristics of as-deposited or annealed A2 O3 gate dielectric films grown on fully depleted SiGe-on-insulator are investigated. An interfacial layer composed of Si Ox and Ge Ox is observed in the as-grown film. The interfacial silicate formation is effectively suppressed by Ge Ox formation. However, Ge Ox is reduced to Ge and extensive silicate formation occurs after annealing. The formation of silicate and disappearance of Ge Ox after annealing leads to a decrease in the density of the interfacial states.",

author = "Zengfeng Di and Miao Zhang and Weili Liu and Qinwo Shen and Suhua Luo and Zhitang Song and Chenglu Lin and Anping Huang and Chu, \{Paul K.\}",

year = "2005",

month = jun,

day = "27",

doi = "10.1063/1.1957109",

language = "英语",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

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T1 - Interfacial and electrical characteristics of Al2O3 gate dielectric on fully depleted SiGe on insulator

AU - Di, Zengfeng

AU - Zhang, Miao

AU - Liu, Weili

AU - Shen, Qinwo

AU - Luo, Suhua

AU - Song, Zhitang

AU - Lin, Chenglu

AU - Huang, Anping

AU - Chu, Paul K.

PY - 2005/6/27

Y1 - 2005/6/27

N2 - The interfacial and electrical characteristics of as-deposited or annealed A2 O3 gate dielectric films grown on fully depleted SiGe-on-insulator are investigated. An interfacial layer composed of Si Ox and Ge Ox is observed in the as-grown film. The interfacial silicate formation is effectively suppressed by Ge Ox formation. However, Ge Ox is reduced to Ge and extensive silicate formation occurs after annealing. The formation of silicate and disappearance of Ge Ox after annealing leads to a decrease in the density of the interfacial states.

AB - The interfacial and electrical characteristics of as-deposited or annealed A2 O3 gate dielectric films grown on fully depleted SiGe-on-insulator are investigated. An interfacial layer composed of Si Ox and Ge Ox is observed in the as-grown film. The interfacial silicate formation is effectively suppressed by Ge Ox formation. However, Ge Ox is reduced to Ge and extensive silicate formation occurs after annealing. The formation of silicate and disappearance of Ge Ox after annealing leads to a decrease in the density of the interfacial states.

UR - https://www.scopus.com/pages/publications/22144447502

U2 - 10.1063/1.1957109

DO - 10.1063/1.1957109

M3 - 文章

AN - SCOPUS:22144447502

SN - 0003-6951

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 262102

ER -

Interfacial and electrical characteristics of Al₂O₃ gate dielectric on fully depleted SiGe on insulator

Abstract

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