Interface atomic-scale structure and its impact on quantum electron transport

Zhongchang Wang; Mitsuhiro Saito; Susumu Tsukimoto; Yuichi Ikuhara

doi:10.1002/adma.200900877

Interface atomic-scale structure and its impact on quantum electron transport

Zhongchang Wang^*
, Mitsuhiro Saito
, Susumu Tsukimoto
, Yuichi Ikuhara

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Local structure, chemistry, and bonding at interfaces often radically affect the properties of materials. A combination of scanning transmission electron microscopy and density functional theory calculations reveals an atomic layer of carbon at a SiC/ Ti₃SiC₂ interface in Ohmic contact to p-type SiC (see image), which results in stronger adhesion, a lowered Schottky barrier, and enhanced transport. This is a key factor to understanding the origin of the Ohmic nature.

Original language	English
Pages (from-to)	4966-4969
Number of pages	4
Journal	Advanced Materials
Volume	21
Issue number	48
DOIs	https://doi.org/10.1002/adma.200900877
State	Published - 28 Dec 2009
Externally published	Yes

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title = "Interface atomic-scale structure and its impact on quantum electron transport",

abstract = "Local structure, chemistry, and bonding at interfaces often radically affect the properties of materials. A combination of scanning transmission electron microscopy and density functional theory calculations reveals an atomic layer of carbon at a SiC/ Ti3SiC2 interface in Ohmic contact to p-type SiC (see image), which results in stronger adhesion, a lowered Schottky barrier, and enhanced transport. This is a key factor to understanding the origin of the Ohmic nature.",

author = "Zhongchang Wang and Mitsuhiro Saito and Susumu Tsukimoto and Yuichi Ikuhara",

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AU - Wang, Zhongchang

AU - Saito, Mitsuhiro

AU - Tsukimoto, Susumu

AU - Ikuhara, Yuichi

PY - 2009/12/28

Y1 - 2009/12/28

N2 - Local structure, chemistry, and bonding at interfaces often radically affect the properties of materials. A combination of scanning transmission electron microscopy and density functional theory calculations reveals an atomic layer of carbon at a SiC/ Ti3SiC2 interface in Ohmic contact to p-type SiC (see image), which results in stronger adhesion, a lowered Schottky barrier, and enhanced transport. This is a key factor to understanding the origin of the Ohmic nature.

AB - Local structure, chemistry, and bonding at interfaces often radically affect the properties of materials. A combination of scanning transmission electron microscopy and density functional theory calculations reveals an atomic layer of carbon at a SiC/ Ti3SiC2 interface in Ohmic contact to p-type SiC (see image), which results in stronger adhesion, a lowered Schottky barrier, and enhanced transport. This is a key factor to understanding the origin of the Ohmic nature.

UR - https://www.scopus.com/pages/publications/73949119589

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DO - 10.1002/adma.200900877

M3 - 文章

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EP - 4969

JO - Advanced Materials

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Interface atomic-scale structure and its impact on quantum electron transport

Abstract

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