Interdiffusion study in the Nb-Si binary system

Junying Yang; Haixia Wei; Chungen Zhou

doi:10.1142/S0217979210066264

Interdiffusion study in the Nb-Si binary system

Junying Yang^*
, Haixia Wei
, Chungen Zhou

^*Corresponding author for this work

School of Materials Science and Engineering

Beihang University

Research output: Contribution to journal › Article › peer-review

Abstract

Diffusion experiments on Nb/Si couples were conducted at 1050°C, 1150°C, 1250°C for annealing for 8h, 10h and 15h. Two intermediate phases, NbSi2 and Nb5Si3, were found to develop and grow as parallel layers in the Nb/Si couples, according to the parabolic rate law. The diffusion properties of the different phases were evaluated in terms of alternative theories, which were demonstrated to be equivalent algebraically but complementary because they are expressed in terms of different experimental variables.

Original language	English
Pages (from-to)	3167-3172
Number of pages	6
Journal	International Journal of Modern Physics B
Volume	24
Issue number	15-16
DOIs	https://doi.org/10.1142/S0217979210066264
State	Published - 30 Jun 2010

Keywords

Kinetics
diffusion theory
interdiffusion
silicide

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title = "Interdiffusion study in the Nb-Si binary system",

abstract = "Diffusion experiments on Nb/Si couples were conducted at 1050°C, 1150°C, 1250°C for annealing for 8h, 10h and 15h. Two intermediate phases, NbSi2 and Nb5Si3, were found to develop and grow as parallel layers in the Nb/Si couples, according to the parabolic rate law. The diffusion properties of the different phases were evaluated in terms of alternative theories, which were demonstrated to be equivalent algebraically but complementary because they are expressed in terms of different experimental variables.",

keywords = "Kinetics, diffusion theory, interdiffusion, silicide",

author = "Junying Yang and Haixia Wei and Chungen Zhou",

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AU - Yang, Junying

AU - Wei, Haixia

AU - Zhou, Chungen

PY - 2010/6/30

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N2 - Diffusion experiments on Nb/Si couples were conducted at 1050°C, 1150°C, 1250°C for annealing for 8h, 10h and 15h. Two intermediate phases, NbSi2 and Nb5Si3, were found to develop and grow as parallel layers in the Nb/Si couples, according to the parabolic rate law. The diffusion properties of the different phases were evaluated in terms of alternative theories, which were demonstrated to be equivalent algebraically but complementary because they are expressed in terms of different experimental variables.

AB - Diffusion experiments on Nb/Si couples were conducted at 1050°C, 1150°C, 1250°C for annealing for 8h, 10h and 15h. Two intermediate phases, NbSi2 and Nb5Si3, were found to develop and grow as parallel layers in the Nb/Si couples, according to the parabolic rate law. The diffusion properties of the different phases were evaluated in terms of alternative theories, which were demonstrated to be equivalent algebraically but complementary because they are expressed in terms of different experimental variables.

KW - Kinetics

KW - diffusion theory

KW - interdiffusion

KW - silicide

UR - https://www.scopus.com/pages/publications/77956013846

U2 - 10.1142/S0217979210066264

DO - 10.1142/S0217979210066264

M3 - 文章

AN - SCOPUS:77956013846

SN - 0217-9792

VL - 24

SP - 3167

EP - 3172

JO - International Journal of Modern Physics B

JF - International Journal of Modern Physics B

IS - 15-16

ER -

Interdiffusion study in the Nb-Si binary system

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Keywords

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