Abstract
Since graphene was successfully exfoliated, intercalation has been reviewed from bulk materials to two-dimensional counterparts. Here 1T phase Cu-TaS2 was successfully prepared via intercalating Cu into 2D layered TaS2 based on a solution method, which cannot damage the crystal structure of the target material and can realize uniform intercalation with a large amount of dopants. The electrical conductivity of 2D TaS2 intercalated by Cu has an obvious increase compared with 2D TaS2. Considering the peculiar metal-insulator transitions (MITs) of TaS2, our work may provide new opportunities for future superconductor and CDW-based memory devices.
| Original language | English |
|---|---|
| Pages (from-to) | 46699-46703 |
| Number of pages | 5 |
| Journal | RSC Advances |
| Volume | 7 |
| Issue number | 74 |
| DOIs | |
| State | Published - 2017 |
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