@inproceedings{e784fba6f84c41999ceedb49e2da69be,
title = "Integration of Spin-RAM technology in FPGA circuits",
abstract = "In this paper, we propose a new non-volatile FPGA circuit based on Spin-RAM technology (Spin Transfer Torque Magnetisation Switching RAM), new generation of MRAM (Magnetic RAM). This Spin-RAM based FPGA circuit could process securely the information in low power dissipation and high speed; meanwhile all the data processed are stored permanently in the distributed Spin-RAM memory. In this non-volatile FPGA design, MTJs (Magnetic Tunnel Junction) are used as storage elements. Contrary to conventional MRAM circuits we don't use a complex sense amplifier, but a simple SRAM based sense amplifier couples two MTJs per bit. The non-volatility of Spin-RAM allows the dynamical configuration of FPGA circuits and the start-up time of circuit can be decreased up to some hundred pico seconds. As conventional MRAM, the MTJs of Spin-RAM will be on the semiconductor surface; therefore the circuit die area will not be enlarged comparing with the conventional FPGA.",
author = "W. Zhao and E. Belhaire and Q. Mistral and E. Nicolle and T. Devolder and C. Chapper",
year = "2006",
doi = "10.1109/ICSICT.2006.306511",
language = "英语",
isbn = "1424401615",
series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",
publisher = "IEEE Computer Society",
pages = "799--802",
booktitle = "ICSICT-2006",
address = "美国",
note = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",
}